2015
DOI: 10.1007/s10762-015-0169-1
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Camera for High-Speed THz Imaging

Abstract: We present a 24×24 pixel camera capable of high-speed THz imaging in power-detection mode. Each pixel of the sensor array consists of a pair of 150-nm NMOS transistors coupled to a patch antenna with resonance at 600 GHz. The camera can operate with a speed of up to 450 frames per second where it exhibits a minimum resolvable power of 10.5 nW per pixel. For a 30-Hz frame rate, the minimum resolvable power is 1.4 nW.

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Cited by 43 publications
(25 citation statements)
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“…Apart from synthetic aperture (SA) imaging, other popular imaging methods mainly include raster scanning method [4,10] and focal plane array method [31]. Compared to a raster scanning method, no scanning motors or cumbersome reflectors are needed for SA imaging.…”
Section: Analysis and Discussionmentioning
confidence: 99%
“…Apart from synthetic aperture (SA) imaging, other popular imaging methods mainly include raster scanning method [4,10] and focal plane array method [31]. Compared to a raster scanning method, no scanning motors or cumbersome reflectors are needed for SA imaging.…”
Section: Analysis and Discussionmentioning
confidence: 99%
“…Lowfrequency components at 45 Hz and their multiplicative originate from the vibration of cables induced by the cryocooler and can be strongly suppressed by using an integrated low-noise amplifier within the detector package. A considerably high channel impedance of 20 kΩ allows easy integration of low-noise amplifiers based on discrete components or integrated circuits with convenient 4-nV/ √ Hz input-referred voltage fluctuation spectral density [22], which introduces additional noise contribution only by 2.5%. The corner frequency of 1/f noise for the detector-amplifier system lies at about 30 Hz.…”
Section: A Detector Spectral Characteristicsmentioning
confidence: 99%
“…In this section, the MDP values per pixel for the MB-THz-FPAs [26,31,32,34] are compared with those of other THz detectors, such as antenna-coupled CMOS-THz-FPAs [12,13,15,16,36,44] and antenna-coupled detectors based on III-V compound semiconductor technologies [18][19][20][22][23][24] . Table 2 summarizes the parameters of these THz detectors.…”
Section: Comparison Of Performances For Different Detectorsmentioning
confidence: 99%
“…(CMOS) [12,36] 856 GHz 32x32 80 μm Goethe Univ. (CMOS) [13,44] 600 GHz 24x24 195 μm Tower Jazz (SiGe BiCMOS) [15] 315 GHz 4x4 ca. 520 μm Univ.…”
Section: Comparison Of Performances For Different Detectorsmentioning
confidence: 99%