Calibration of the second-order nonlinear optical susceptibility of surface and bulk of glass

Rodríguez, Francisco; Wang, Fu Xiang; Kauranen, Martti

doi:10.1364/oe.16.008704

Cited by 32 publications

(17 citation statements)

References 39 publications

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“…The strong THz emission amplitude from the metamaterial is on the same order as optimal ZnTe crystals that are thousands of times thicker, revealing a gigantic resonant second-order sheet nonlinear susceptibility of SRRs B10 À 16 m 2 V À 1 , which is three orders of magnitude higher than the typical surface and sheet values of bulk crystals and thin films [31][32][33] .…”

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confidence: 94%

Broadband terahertz generation from metamaterials

et al. 2014

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The terahertz spectral regime, ranging from about 0.1-15 THz, is one of the least explored yet most technologically transformative spectral regions. One current challenge is to develop efficient and compact terahertz emitters/detectors with a broadband and gapless spectrum that can be tailored for various pump photon energies. Here we demonstrate efficient single-cycle broadband THz generation, ranging from about 0.1-4 THz, from a thin layer of split-ring resonators with few tens of nanometers thickness by pumping at the telecommunications wavelength of 1.5 mm (200 THz). The terahertz emission arises from exciting the magnetic-dipole resonance of the split-ring resonators and quickly decreases under off-resonance pumping. This, together with pump polarization dependence and power scaling of the terahertz emission, identifies the role of optically induced nonlinear currents in split-ring resonators. We also reveal a giant sheet nonlinear susceptibility B10 À 16 m 2 V À 1 that far exceeds thin films and bulk non-centrosymmetric materials.

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confidence: 94%

Broadband terahertz generation from metamaterials

et al. 2014

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“…The expansion coefficients f p , g p , and h s have been previously shown to be linear combinations of the non-vanishing SHG susceptibility tensor components which, for samples of C ∞v symmetry, are χ xxz χ xzx χ yyz χ yzy , χ zxx χ zyy , and χ zzz [22], where z is the sample normal and x, y are the two orthogonal in-plane directions [23]. However, it was recently discovered that in order to properly characterize a film with thickness much smaller than the spot size of the fundamental beam, effects arising from multiple reflections within the films can significantly influence the final results [25].…”

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confidence: 99%

Enhancement of bulk second-harmonic generation from silicon nitride films by material composition

et al. 2017

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We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying compositions. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. We found a six-fold enhancement between the lowest and highest second-order susceptibility, with the highest value of approximately 5 pm/V from the most silicon-rich sample. Moreover, the optical losses were found to be sufficiently small (below 6 dB/cm) for applications. The tensorial results show that all samples retain in-plane isotropy independent of the silicon content, highlighting the controllability of the fabrication process. High-performance complementary metal oxide semiconductor (CMOS) compatible materials are essential elements for advanced on-chip photonic devices to realize the future progress in all-optical processing. The ultra-fast speed and high bandwidth of integrated photonic networks continuously require new materials possessing excellent linear and nonlinear optical properties [1,2]. Although silicon (Si) is still the most commonly used CMOS material, the intrinsic drawbacks of Si, such as its narrow bandgap and centrosymmetric structure, highly limit its future applications especially in the visible and ultraviolet spectral regimes [2,3]. Thus, exploring novel CMOScompatible materials with wide bandgap and strong optical nonlinearities is very important for future integrated devices.Many photonic applications rely on nonlinear optical effects. One of the limitations of many nonlinear materials for CMOS-compatible platforms is the lack of second-order nonlinearity due to centrosymmetry. The problem can be overcome by poling [4,5], straining the material [3] or by using multilayer composites [6][7][8]. Unexpectedly, CMOS-compatible amorphous silicon nitride films (SiN) have been shown to possess a bulk second-order nonlinearity by measuring strong second-harmonic generation (SHG) from thin films [9][10][11]. Although the exact reason for this strong SHG response remains unclear, it is believed that the complicated composition, crystalline phase, and defects in the film during the deposition may be responsible [10,[12][13][14][15][16].In this Letter, we show that the strong second-harmonic signal from SiN films can be further enhanced by varying the composition of the films prepared with plasma-enhanced chemical vapor deposition (PECVD). Furthermore, we demonstrate that such composition tuning does not compromise the linear optical properties or optical losses of the material for applications. Our results are crucial for the comprehensive understanding of the linear and nonlinear optical properties in SiN films with different structures, opening the path for further optimization of SiN for on-chip devices.We recognize that there have been previous studies yielding different values for the SHG susceptibility of SiN [9,10,11,17,18]. Samples prepared by sputtering can yield very high values of the su...

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“…The SH intensity generated from the multilayer structure is then given by The SH fields E 1 and E 2 represent the contributions from the air-silica interface in region 1 and silica-air interface in region 2, respectively, and E 3 corresponds to the total contribution from the nanocomposite layers. For p -polarized fundamental and SHG light, as used in the Maker-fringe measurements, they can be expressed as2728 and Here, the constants , and 30 represent the independent tensor components of the second-order surface response of the air-silica interface which are defined in terms of the fields inside the material. , on the other hand, is a constant, where e p is the amplitude of the incident p -polarized beam and h n , h S and D denote the thickness of the silver-decorated nanoparticle layer, fused silica layer and glass substrate, respectively.…”

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confidence: 99%

Second-harmonic response of multilayer nanocomposites of silver-decorated nanoparticles and silica

Zdanowicz

Harra

Mäkelä

et al. 2014

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We perform a detailed characterisation of the second-order nonlinear optical response of nanocomposites consisting of alternating layers of silver-decorated silica glass nanoparticles and pure silica glass. The samples are fabricated using aerosol techniques and electron-beam dielectric coating, resulting in a bulk-like material with symmetry-breaking induced by the porosity of the alternating layers. The second-order nonlinear response increases with the number of layers. Further, by determining the components of the second-order susceptibility tensor of the samples, we show that the structural properties of the samples are well maintained as the sample thickness is increased. Our results form an important baseline for any further optimization of these types of structures, which can be fabricated using very straightforward methods.

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Calibration of the second-order nonlinear optical susceptibility of surface and bulk of glass

Cited by 32 publications

References 39 publications

Broadband terahertz generation from metamaterials

Broadband terahertz generation from metamaterials

Enhancement of bulk second-harmonic generation from silicon nitride films by material composition

Second-harmonic response of multilayer nanocomposites of silver-decorated nanoparticles and silica

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