Calibration of boron concentration in CVD single crystal diamond combining ultralow energy secondary ions mass spectrometry and high resolution X-ray diffraction

Mata, B. Guzmand de la; Sanz‐Hervás, A.; Dowsett, M. G.; Schwitters, M.; Twitchen, Daniel J.

doi:10.1016/j.diamond.2006.11.043

Cited by 16 publications

(11 citation statements)

References 24 publications

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“…The CUs of this type are planned to be used in the coming experiments at SLAC with 10-35 GeV electron and positron FACET beam [33]. A set of experiments was performed with few GeV positrons at CERN [34] with the CU based on synthetic diamond doped with boron [35]. Other related experiments include investigations of the radiation of sub-GeV electrons in a bent silicon crystal [36] and of the effectiveness of deflection of multi-GeV electrons by a thin Si crystal [37].…”

mentioning

confidence: 99%

Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystals

Shen

Zhao

Zhang

et al. 2018

Nuclear Instruments and Methods in Physics Research Section B:

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Planar channeling of 855 MeV electrons and positrons in straight and bent tungsten (110) crystal is simulated by means of the MBN Explorer software package.The results of simulations for a broad range of bending radii are analyzed in terms of the channel acceptance, dechanneling length, and spectral distribution of the emitted radiation. Comparison of the results with predictions of other theories as well as with the data for (110) oriented diamond, silicon and germanium crystals is carried out.

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mentioning

confidence: 99%

Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystals

Shen

Zhao

Zhang

et al. 2018

Nuclear Instruments and Methods in Physics Research Section B:

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“…Their relative peak intensities related to the valence band to impurity levels (or band for high doping) permit the deduction of the boron doping level. FTIR and CL both allow the determination of the active boron density (or p-type dopant level), while SIMS gives the total density of boron atoms present in the crystal [96]. Thus, these are complementary techniques.…”

Section: Structural Characterization Techniquesmentioning

confidence: 99%

Diamond for Electronics: Materials, Processing and Devices

et al. 2021

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Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the device technology as a result of its very high mechanical hardness and smaller size of substrates. As a result, diamond is still not considered a reference material for power electronic devices despite its superior Baliga’s figure of merit with respect to other WBG materials. This review paper will give a brief overview of some scientific and technological aspects related to the current state of the main diamond technology aspects. It will report the recent key issues related to crystal growth, characterization techniques, and, in particular, the importance of surface states aspects, fabrication processes, and device fabrication. Finally, the advantages and disadvantages of diamond devices with respect to other WBG materials are also discussed.

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“…Для послойного анализа дельта-слоев требуется сочетание нескольких факторов: высокого разрешения по глубине, высокой элементной чувствительности и большого динамического диапазона регистрируемой концентрации, что не всегда достигается в экспериментах. Решению этих вопросов посвящено большое число работ [8][9][10][11]. Отметим, что указанные методики количественного анализа концентрации атомов примеси [1,2] были разработаны для установок ВИМС с магнитосекторным масс-анализатором фирмы Cameca.…”

Section: поступило в редакцию 17 ноября 2017 гunclassified

Новые Кластерные Вторичные Ионы Для Количественного Анализа Концентрации Атомов Бора В Алмазе Методом Времяпролетной Вторично-Ионной Масс-Спектрометрии

Дроздов¹,

Дроздов²,

Лобаев³

et al. 2018

Письма В Журнал Технической Физики

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A new approach to quantitative analysis of the concentration of boron atoms in diamond using secondary- ion mass spectrometers with time-of-flight mass analyzers is proposed. Along with the known boron-containing lines (B, BC, BC_2), many lines related to cluster secondary ions BC_ N have been found in the mass spectrum; their intensity increases by one or two orders of magnitude when Bi_3 probe ions are used. Lines BC_4, BC_6, BC_2, and BC_8 have the highest intensity (in the descending order); when they are summed, the sensitivity increases by an order of magnitude in comparison with the known mode of detecting BC_2. The parameters of the boron δ-layer in single-crystal diamond films grown under optimal conditions have been measured to be unprecedented: the δ-layer width is about 2 nm, and the concentration is 6.4 × 10^20 cm^–3 (the boron concentrations for doped and undoped diamonds differ by four orders of magnitude).

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Calibration of boron concentration in CVD single crystal diamond combining ultralow energy secondary ions mass spectrometry and high resolution X-ray diffraction

Cited by 16 publications

References 24 publications

Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystals

Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystals

Diamond for Electronics: Materials, Processing and Devices

Новые Кластерные Вторичные Ионы Для Количественного Анализа Концентрации Атомов Бора В Алмазе Методом Времяпролетной Вторично-Ионной Масс-Спектрометрии

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Calibration of boron concentration in CVD single crystal diamond combining ultralow energy secondary ions mass spectrometry and high resolution X-ray diffraction

Cited by 16 publications

References 24 publications

Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystals

Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystals

Diamond for Electronics: Materials, Processing and Devices

Новые Кластерные Вторичные Ионы Для Количественного Анализа Концентрации Атомов Бора В Алмазе Методом Времяпролетной Вторично-Ионной Масс-Спектрометрии

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Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystals

Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystals