Calculation of the temperature dependence of the vertical and horizontal mobilities in InAs/GaSb superlattices

Theoretical Aspects of Minority Carrier Extraction in Unipolar Barrier Infrared Detectors

“…For this superlattice, the vertical and horizontal effective masses are very similar, but there can be substantial differences between vertical and horizontal scattering times because of interface roughness. [41][42][43] We believe the different scattering times led to the observed electron mobility anisotropy, not the different vertical and horizontal electron effective masses. We should also remark that the conductivity effective masses reported here are computed for equilibrium carrier populations.…”

Design and calculation of photoelectric properties of resonance enhanced InAs/GaSb type-II superlattices photodetectors with diffraction rings structure

“…The formula of diffusion dark current is as follows [ [23] , [24] , [25] ]. where, is the electron charge and is the Boltzmann constant, is the Kelvin temperature, is the applied bias voltage; and are the minority carrier lifetimes of electrons and holes, and the values are all 100 ns, respectively [ 26 , 27 ]; and are the diffusion lengths of electrons and holes, and , where and are mobility of electrons in the p-region and holes in the n-region, and the values are 3000 and 300 cm 2 /(V·s), respectively [ [28] , [29] , [30] ]; and are the concentrations of acceptors and donors, and the specific values are given in the third part of device design, is the intrinsic carrier concentration.…”