Calculation Of The Interdiffusion Coefficient In The Cu-Zn Diffusion Couple

Hoxha, Adhurim; Oettel, H.; Heger, D.

doi:10.1063/1.3322515

Cited by 10 publications

(22 citation statements)

References 3 publications

(3 reference statements)

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“…As mentioned in Section 1, the solid-state reactive diffusion in the Cu/Zn system was experimentally observed also by Hoxha et al 10) In their experiment, Cu/Zn diffusion couples were prepared by a diffusion bonding technique and then isothermally annealed at T = 523-653 K. According to their observation, a compound layer composed of the γ and ε phases is formed at the original interface of the diffusion couple during annealing. They reported the concentration proles across the γ and ε phases in the diffusion couples annealed at T = 653 K for various periods.…”

Section: Rate-controlling Process Of Intermetallic Growthmentioning

confidence: 95%

“…Therefore, there is something wrong for the values of K 1 and K 2 estimated in their article. 10) As a consequence, unfortunately, the comparison between their result and the present one is not available at T = 523-623 K.…”

Section: Rate-controlling Process Of Intermetallic Growthmentioning

confidence: 98%

“…As can be seen, n is close to 0.5. Therefore, we can conclude that the layer growth is predominantly controlled by volume diffusion at T = 653 K. In their article, 10) the following equation is used to describe the relationship between l i and t, and the values of K 1 = 6257.5 × 10 −12 m 2 /s and K 2 = 1150.6 × 10 −12 m 2 /s are estimated for l 1 and l 2 , respectively, at T = 653 K.…”

Section: Rate-controlling Process Of Intermetallic Growthmentioning

confidence: 99%

“…In contrast, the solid-state reactive diffusion in the Cu/Zn system was experimentally studied by Hoxha et al 10) In their study, Cu/Zn diffusion couples were prepared by a diffusion bonding technique and then isothermally annealed at temperatures of T = 523-653 K. Their study indicates that a compound layer consisting of the γ and ε phases is produced at the original interface of the diffusion couple during annealing. The total thickness of the γ and ε layers is almost proportional to the square root of the annealing time at T = 653 K. On the other hand, at T = 523-623 K, raw experimental values for thicknesses of the γ and ε layers are not indicated in their article.…”

Section: Introductionmentioning

confidence: 99%

“…Hence, they estimated the values of K 1 and K 2 at T = 523-623 K. 10) However, the values of K 1 and K 2 for T = 523-623 K also provide unrealistically large values of l 1 and l 2 . Therefore, there is something wrong for the values of K 1 and K 2 estimated in their article.…”

Section: Rate-controlling Process Of Intermetallic Growthmentioning

confidence: 99%

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Kinetics of Solid-State Reactive Diffusion in the Cu/Zn System

2017

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The kinetics of the solid-state reactive diffusion between pure Cu and Zn was experimentally examined using sandwich Zn/Cu/Zn diffusion couples prepared by a diffusion bonding technique. The diffusion couples were isothermally annealed in the temperature range of 523-623 K for various times up to 49 h. Owing to annealing, an intermetallic layer consisting of the γ and ε phases was formed at the original interface in the diffusion couple, where the thickness is much smaller for the ε phase than for the γ phase. The total thickness of the intermetallic layer increases in proportion to a power function of the annealing time. The exponent of the power function takes values of 0.60-0.62 at 523-623 K. These values of the exponent indicate that volume diffusion predominantly controls the layer growth and interface reaction partially contributes to the rate-controlling process.

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Section: Rate-controlling Process Of Intermetallic Growthmentioning

confidence: 95%

Section: Rate-controlling Process Of Intermetallic Growthmentioning

confidence: 98%

Section: Rate-controlling Process Of Intermetallic Growthmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Rate-controlling Process Of Intermetallic Growthmentioning

confidence: 99%

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Kinetics of Solid-State Reactive Diffusion in the Cu/Zn System

2017

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Intermetallic Growth at the Interfaces Between Zn4Sb3 Thermoelectric Material and Various Metallic Electrodes

Chen

Lee

Yeh

et al. 2021

Metall Mater Trans A

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Zn 4 Sb 3 has received interest for thermoelectric (TE) applications due to its low cost and low environmental impact. In this study, the Zn 4 Sb 3 TE material was diffusion-bonded with multiple electrode materials of Ni, Ag, Cu, Pd and Ti for evaluation of the manufacturing of TE modules. Intermetallic compounds formed at the interfaces of the Zn 4 Sb 3 diffusion couples, with Ni, Ag, Cu, and Pd exhibiting the selective reaction effect with zinc due to its high chemical affinity and low formation energies. Optimized bonding strengths of 6.6 to 8.2 MPa were achieved in Zn 4 Sb 3 bonded with Ni, Ag and Cu materials at 350 °C. The Pd material could only bond at a temperature above 300 °C, and cracks presented after longer bonding times. As for the titanium, Zn 4 Sb 3 /Ti was successfully joined only at temperatures between 400 °C and 500 °C. It was observed that a rather thin TiSb 2 intermetallic compound formed during the interfacial reactions between Zn 4 Sb 3 and Ti, which grew significantly more slowly than those formed at the interfaces of Zn 4 Sb 3 diffusion-coupled with Ni, Ag, Cu, and Pd metallic materials. Our results provide a reference for evaluating these common materials as suitable electrode and barrier layer candidates for utilizing the Zn 4 Sb 3 TE material.

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Diffusion Coefficients and Phase Equilibria of the Cu-Zn Binary System Studied Using Diffusion Couples

Eastman

Zhang

Zhao

2020

J. Phase Equilib. Diffus.

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The diffusion behavior and phase equilibria in the Cu-Zn binary system were investigated using solidsolid and solid-liquid diffusion couples. Heat treatments at temperatures ranging from 100 to 750°C were performed and the samples were examined using optical microscopy, energy dispersive x-ray spectroscopy, and electron probe microanalysis to identify the phases and to obtain composition profiles. Solubility limits of both solid solution and intermetallic phases were then evaluated, and a forwardsimulation analysis (FSA) was applied to extract interdiffusion coefficients. The composition profiles from Hoxha et al. were also re-analyzed using FSA to obtain more reliable diffusion coefficient data without the assumption of constant diffusion coefficients for the intermetallic phases. A comprehensive assessment of the interdiffusion coefficients in three intermetallic phases of the Cu-Zn system was performed based on the results from the current study as well as those in the literature. Activation energies and Arrhenius pre-factors were evaluated for each phase as a function of composition. The fitted equations based on the comprehensive assessment have the capabilities of computing the interdiffusion coefficients of each of the phases at a given composition and temperature. Suggested modifications to the Cu-Zn binary phase diagram were presented based on the new experimental information gathered from the present study. A clear explanation is provided for the puzzling low Zn concentrations often observed in the Cu-rich fcc phase of Cu-Zn diffusion couples in comparison with the expected high solubility values based on the equilibrium Cu-Zn phase diagram.

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Calculation Of The Interdiffusion Coefficient In The Cu-Zn Diffusion Couple

Cited by 10 publications

References 3 publications

Kinetics of Solid-State Reactive Diffusion in the Cu/Zn System

Kinetics of Solid-State Reactive Diffusion in the Cu/Zn System

Intermetallic Growth at the Interfaces Between Zn4Sb3 Thermoelectric Material and Various Metallic Electrodes

Diffusion Coefficients and Phase Equilibria of the Cu-Zn Binary System Studied Using Diffusion Couples

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