1997
DOI: 10.1002/1521-3951(199709)203:1<79::aid-pssb79>3.0.co;2-a
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Calculation of Misfit-Dislocation Density Generated by Lattice Mismatch at the NiSi2-Si Interface

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Cited by 9 publications
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“…These dislocations are associated with the formation of coherent interfaces between crystallites, permitted by the lattice mismatch strain at room temperature of x = 0.05 of 0.56%, which is lower than that of BSCFW (0.74%). The interface‐defect density is theoretically calculated using the heteroepitaxial strained layer model, [ 32 ] that estimates the edge dislocation density at the SP/DP interface of x = 0.05 to be of the order of 10 10 –10 12 cm −2 (full details provided in Note S2, Supporting Information). According to the definition of dislocation density ( N ), the number of dislocation lines crossing the unit area in x = 0.05 is 2.5 × 10 12 cm −2 observed directly from HAADF‐STEM images, in good agreement with the range above determined through calculation.…”
Section: Resultsmentioning
confidence: 99%
“…These dislocations are associated with the formation of coherent interfaces between crystallites, permitted by the lattice mismatch strain at room temperature of x = 0.05 of 0.56%, which is lower than that of BSCFW (0.74%). The interface‐defect density is theoretically calculated using the heteroepitaxial strained layer model, [ 32 ] that estimates the edge dislocation density at the SP/DP interface of x = 0.05 to be of the order of 10 10 –10 12 cm −2 (full details provided in Note S2, Supporting Information). According to the definition of dislocation density ( N ), the number of dislocation lines crossing the unit area in x = 0.05 is 2.5 × 10 12 cm −2 observed directly from HAADF‐STEM images, in good agreement with the range above determined through calculation.…”
Section: Resultsmentioning
confidence: 99%
“…The crystal NiSi 2 /Si/GaAs, the subject of several investigations [7][8][9], is treated as an example. Fig.…”
Section: Introductionmentioning
confidence: 99%