Numerical simulation of the anisotropic elastic field generated by a misfit dislocations along a NiSi2/Si/(001)GaAs heterotwin interface

Brioua, Mourad; Benbouta, Rachid; Madani, Salah; Adami, Lahbib

doi:10.1016/j.jcis.2004.08.160

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Cited by 6 publications

(2 citation statements)

References 10 publications

(10 reference statements)

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“…2. These curves, which do not have any analytical formula, also show a discontinuity of σ 22 along the Al/Cu heterointerface in the quasi-isotropic case [9,10].…”

Section: Resultsmentioning

confidence: 90%

The stress field of a dislocation array in an ultra thin anisotropic heterogeneous bicrystal

Benbouta

Mihi

Brioua

et al. 2005

Physica Status Solidi (a)

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“…2. These curves, which do not have any analytical formula, also show a discontinuity of σ 22 along the Al/Cu heterointerface in the quasi-isotropic case [9,10].…”

Section: Resultsmentioning

confidence: 90%

The stress field of a dislocation array in an ultra thin anisotropic heterogeneous bicrystal

Benbouta

Mihi

Brioua

et al. 2005

Physica Status Solidi (a)

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“…We based our work on material with three layers NiSi2/Si/GaAs; a work which complete the one studied by the author [8] in anisotropic elasticity.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic Effect and the Crystals Nature on the Elastic Fields Dispersal Generated in a Three Layers Material

Brioua

Benbouta

Zidani

2009

AMR

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Semiconductor nanostructures are interesting objects for many microelectronic and optoelectronic applications. Nevertheless, to use them, it is necessary to control their size, their density and their spatial distribution. In the last decade, many researches have been done to control these parameters. One of these researches is the elaboration of a functional substrate inducing a lateral self-organization of nanostructures. The organization driving force is the strain field induced on the surface by a buried dislocations network. The purpose of this work is the numerical resolution, in the case of anisotropic elasticity, of the problem of a misfit dislocation located between an infinite substrate and two-layer composite. The elastic fields of stresses are calculated for various orientations of the Burgers vector, by inversion of 30x30 arrays of linear equations. The composite NiSi2/Si / (001) GaAs, that made the object of several investigations, is treated like example.

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The Effect of the Elastic Fields Caused by a Networks of Dislocations Placed at Interfaces of a Three-Layer Material Cu/Cu/(001) Fe in the Case of Anisotropic Elasticity

2016

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Numerical simulation of the anisotropic elastic field generated by a misfit dislocations along a NiSi2/Si/(001)GaAs heterotwin interface

Cited by 6 publications

References 10 publications

The stress field of a dislocation array in an ultra thin anisotropic heterogeneous bicrystal

The stress field of a dislocation array in an ultra thin anisotropic heterogeneous bicrystal

Anisotropic Effect and the Crystals Nature on the Elastic Fields Dispersal Generated in a Three Layers Material

The Effect of the Elastic Fields Caused by a Networks of Dislocations Placed at Interfaces of a Three-Layer Material Cu/Cu/(001) Fe in the Case of Anisotropic Elasticity

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