Calculation of InAsBi ternary phase diagram

Elayech, N.; Fitouri, H.; Boussaha, R.; Rebey, A.; Jani, B. El

doi:10.1016/j.vacuum.2016.06.009

Cited by 7 publications

(3 citation statements)

References 29 publications

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“…This surface energy reduction allows the system to favor strain relaxation through the formation of 3D islands. For the As-rich growth conditions used here, we do not expect substantial Bi incorporation. , We also note that for InAs QDs grown on planar GaAs(100), the use of Bi as a surfactant was shown to significantly increase the photoluminescence intensity of the QDs as well as to redshift their energy, which is of interest for realizing QDs emitting at telecommunication wavelengths …”

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confidence: 71%

“…For the As-rich growth conditions used here, we do not expect substantial Bi incorporation. 17,18 We also note that for InAs QDs grown on planar GaAs(100), the use of Bi as a surfactant was shown to significantly increase the photoluminescence intensity of the QDs as well as to redshift their energy, which is of interest for realizing QDs emitting at telecommunication wavelengths. 19 In order to better visualize the geometry of the 3D islands on the NW sidewall, InAs islands were deposited on thicker NWs of about 170 nm diameter under a Bi BEP of 210 -6 mbar.…”

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Self-Assembly of InAs Nanostructures on the Sidewalls of GaAs Nanowires Directed by a Bi Surfactant

et al. 2017

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Surface energies play a dominant role in the self-assembly of three dimensional (3D) nanostructures. In this letter, we show that using surfactants to modify surface energies can provide a means to externally control nanostructure self-assembly, enabling the synthesis of novel hierarchical nanostructures. We explore Bi as a surfactant in the growth of InAs on the {110} sidewall facets of GaAs nanowires. The presence of surface Bi induces the formation of InAs 3D islands by a process resembling the StranskiKrastanov mechanism, which does not occur in the absence of Bi on these surfaces. The InAs 3D islands nucleate at the corners of the {110} facets above a critical shell thickness and then elongate along 110 directions in the plane of the nanowire sidewalls. Exploiting this growth mechanism, we realize a series of novel hierarchical nanostructures, ranging from InAs quantum dots on single {110} nanowire facets to zig-zag shaped nanorings completely encircling nanowire cores. Photoluminescence spectroscopy and cathodoluminescence spectral line scans reveal that small surfactant-induced InAs 3D islands behave as optically active quantum dots. This work illustrates how surfactants can provide an unprecedented level of external control over nanostructure self-assembly. KEYWORDS: nanowire, quantum dot, bismuth, surfactant, GaAs, semiconductor 2The bottom-up self-assembly of semiconductor nanostructures is directed by energy minimization. As a result, many aspects of nanostructure self-assembly are intrinsic and therefore difficult to control externally. For example, nanostructures such as nanowires (NWs) and quantum dots (QDs) spontaneously form low-energy facets during their synthesis. In the case of GaAs NWs grown by the Ga-assisted vapor-liquid-solid (VLS) mode, the sidewall facets are of {110} orientation. 1 This poses challenges for the realization of advanced hierarchical structures, such as QDs embedded within NWs, 2,3 since two-dimensional (2D) layer growth is always favored on GaAs{110} surfaces and three-dimensional (3D) islands do not form by the StranskiKrastanov (SK) mechanism. 2,4-6 The SK growth of InAs 3D islands on these surfaces has been observed after covering the facets with a thin AlAs layer, but, this is undesirable for most applications. 2,7 In contrast, GaAs NWs synthesized by Au-catalyzed growth typically exhibit {112} sidewall facets and the SK mechanism does occur on these surfaces, 6,8 however, the presence of Au can be detrimental to NW optoelectronic properties. 9 We recently reported that the presence of surface Bi can induce the self-assembly of InAs 3D islands directly on planar GaAs(110) surfaces. 10 The Bi surfactant was shown to modify the surface energies, reducing the energetic cost of 3D island formation. Furthermore, in contrast to more common surface-segregating elements like Sb and Te, which have been shown to reduce adatom diffusion and consequently inhibit the formation of 3D islands, 11,12 Bi has been found to increase adatom diffusion. 13 This makes Bi of particular i...

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Self-Assembly of InAs Nanostructures on the Sidewalls of GaAs Nanowires Directed by a Bi Surfactant

et al. 2017

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“…The large miscibility gap between regions of InBi and InAs 10 resulting from the respective tetragonal and cubic lattice structure generates phase separation and clustering of Bi adatoms during the growth of bulk materials. 19 Previous experimental studies focus on the formation of thin metallic Bi films on top of ZB bulk substrates. [20][21][22][23] Bi is deposited for several monolayers on a sample at room temperature and subsequently annealed.…”

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confidence: 99%