Calculation of distribution coefficients of donors in III-V semiconductors

Stringfellow, G. B.

doi:10.1016/s0022-3697(74)80257-x

Cited by 27 publications

(7 citation statements)

References 36 publications

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“…The quaternary solid solution In 1-x GaxAs:Sn can be considered as a mixture of three binary compounds InAs GaAs, and SnAs in respective proportions, which is an extension of an approach suggested in [3] for a ternary system III-V plus dopant to calculate impurity distribution coefficients.…”

Section: Thermodynamic Model and Calculation Detailsmentioning

confidence: 99%

“…The component concentrations of the ternary or quaternary liquid phases versus the solid phase composition and the activity coefficients in the liquid or solid phases obey a set of equations yielded by the Vieland's method [4,5] extended to ternary or quaternary systems, and by regular solution models for ternary and multicomponent solutions [4,6]. All parameters involved in these equations are known from the literature [3,4,7] except the liquid phase interaction parameter between Sn and In and the solid phase interaction parameters between SnAs and InAs, GaAs, and contribution to the SnAs activity coefficient originated from the difference between valences of Ga and substitutional Ga Sn . They can be calculated in the manners presented in [3,8] by using the value of the forbidden gap of In 1-x Ga x As versus composition from [9].…”

Section: Inmentioning

confidence: 99%

“…All parameters involved in these equations are known from the literature [3,4,7] except the liquid phase interaction parameter between Sn and In and the solid phase interaction parameters between SnAs and InAs, GaAs, and contribution to the SnAs activity coefficient originated from the difference between valences of Ga and substitutional Ga Sn . They can be calculated in the manners presented in [3,8] by using the value of the forbidden gap of In 1-x Ga x As versus composition from [9]. InAs str γ is determined in terms of the strain-induced Gibbs free energy as it was described in [2].…”

Section: Inmentioning

confidence: 99%

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Interplay of impurity segregation and lattice mismatch in molecular beam epitaxy of III′–III″–V compounds plus dopant: application to the InGaAs:Sn nanoheterolayer growth

Chikalova-Luzina

2008

Phys. Status Solidi (c)

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A thermodynamic model for molecular beam epitaxy of quaternary solid alloys III′–III″–V plus dopant is developed on a practical example of In1x Gax As:Sn/GaAs heterolayer growth. In the frame of the model, the interplay of surface segregation and strain during epitaxy is analyzed. It is shown Sn atoms, being segregated during the growth in the In–stabilized conditions, act as an efficient surfactant, and Sn doping may be used to improve the surface morphology of strained nanoheterolayers. It is found that high doping level and the low growth temperatures are favourable for achieving a smooth morphology. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Thermodynamic Model and Calculation Detailsmentioning

confidence: 99%

Section: Inmentioning

confidence: 99%

Section: Inmentioning

confidence: 99%

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Interplay of impurity segregation and lattice mismatch in molecular beam epitaxy of III′–III″–V compounds plus dopant: application to the InGaAs:Sn nanoheterolayer growth

Chikalova-Luzina

2008

Phys. Status Solidi (c)

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“…But in the case of high Sn concentrations in melt and semiconductor the segregation coefficient was found to be approximately independent of the process temperature in the low temperature range (15). This corresponds to theoretical calculations of the segregation coefficient by Stringfellow (26). The normalization constant is evaluated with the lowest experimental concentration ND (843~ The temperature-dependent properties 7As, ~sn, XAs, and Xsn are determined by the working points on the quasibinary Sn-GaAs cut of the ternary phase diagram (27), where heavily Sn-doped solids are concerned.…”

Section: Acknowledgmentsmentioning

confidence: 99%

The Effect of Growth Rate and Temperature on the Incorporation of Sn in GaAs during LPE

König

1977

J. Electrochem. Soc.

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A growth rate dependence of the impurity incorporation .... has been measured for the first time: average carrier n, donor ND, and acceptor NA concentrations of heavily Sn-doped GaAs layers grown by liquid phase epitaxy (LPE) increase in the range 0.2 < V/~m/min < 6. At faster growth rates, the concentrations tend to be constant (1.4 9 1019 cm -a for donors, 3.5 9 10 is cm a for acceptors). Growth rates between 0.2 and 35 #m/rain have been adjusted by varying the cooling rates of the epitaxial processes_between__0.04 ~ and 100~It can be reported that the relation between I~D/A and V corresponds to the theoretical predictions under surface equilibrium conditions. The most important parameter is the barrier height of the system melt and semiconductor, modified by a concentration-dependent barrier lowering in the case of heavy doping. Based on the same assumptions, the temperature dependence of the measured incorporation ND/A (T) is explained. This results from a comparison of the possiole incorporation theories surface and bulk equilibrium.During epitaxial growth from the liquid phase, the interface between melt and semiconductor can be regarded as a metal semiconductor contact because of the great density of conduction electrons in the melt. The Schottky model is then applicable to the surface. Merten and Hatcher (1) have pointed this out.Later on Zschauer and Vogel (2) and Casey et aI. (3) used this model. As a consequence of such an electrical model, the thermodynamic equation for the impurity incorporation will have electrical properties like the Fermi level or the barrier height (3,4).According to the growth conditions, two aspects have to be distinguished: the bulk equilibrium and the surface equilibrium. If the growth rates of the crystal are slow compared with the impurity diffusion in the semiconductor, there exists a thermal equilibrium between the two phases, melt and semiconductor bulk (bulk equilibrium). This model explains the impurity incorporation of Zn (5, 6) and Cu (7) in GaAs. Where the ratio of the growth rate to the solid diffusion constant is large, the melt is in equilibrium with the surface of the growing crystal only. The important parameter of the surface equilibrium theory is represented by the height of the Schottky barrier. The validity of this theory has been shown for the incorporation of Te (8) and for the Sn donor (4,9). Panish has found that the incorporation of Sn in GaAs can be better explained if one also assumes a Sn acceptor complex SnAs2VGa using the surface equilibrium theory again (4). The concentration in the case of bulk equilibrium is almost proportional to the square root of the atomic fraction of tin Xs= in the melt, while in the case of surface equilibrium it is directly proportional to Xsn. In spite of the principal agreement Panish obtained with the surface equilibrium theory, for high Sn concentrations above 4 9 1017 cm -3 there exists a discrepancy between theory and experiment: Experimentally evaluated concentrations indicate a weaker slope with higher Xsn data t...

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“…Stringfellow et al [11] reported the LPE growth of Inl_xGaxP on (lll)B GaAs substrate by steady-state liquid-phase epitaxy (SS-LPE). Many of the experiments conducted for the LPE growth of InGaP/GaAs system are near or above 800 ~ Stringfellow [11,33,34] found that good epitaxial layers can be grown in the composition range 0.48 < x ~< 0.53 with minimum lattice mismatch not exceeding 0.2-0.3% and Hakki et al [35] reported that the single crystals can be grown in the composition range of 0.45 ~< x ~< 0.75 with mismatch around 2.6% in the 800-900 ~ temperature range. This effect was observed by many researchers [12][13][14][15][16][17][18] and is referred to as a composition-pulling effect or latticelatching effect.…”

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confidence: 99%

Studies on nucleation kinetics of In1−xGaxP/GaAs by Liquid-Phase Epitaxy

1995

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Nucleation kinetics during the Liquid-Phase Epitaxial (LPE) growth of In1_ x GaxP on GaAs substrate have been studied. The behaviour of non-equilibrium solid-liquid interface between In-Ga-P solution and GaAs substrate has been analysed and hence the expression derived for the stress-induced supercooling has been incorporated in the classical heterogeneous nucleation theory. The condition for the growth of good-quality GaInP layer on GaAs substrate has been shown theoretically.PACS 68.55.Df-Liquid phase epitaxy.

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Calculation of distribution coefficients of donors in III-V semiconductors

Cited by 27 publications

References 36 publications

Interplay of impurity segregation and lattice mismatch in molecular beam epitaxy of III′–III″–V compounds plus dopant: application to the InGaAs:Sn nanoheterolayer growth

Interplay of impurity segregation and lattice mismatch in molecular beam epitaxy of III′–III″–V compounds plus dopant: application to the InGaAs:Sn nanoheterolayer growth

The Effect of Growth Rate and Temperature on the Incorporation of Sn in GaAs during LPE

Studies on nucleation kinetics of In1−xGaxP/GaAs by Liquid-Phase Epitaxy

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