Calculation of contact currents in device simulation

Numerical investigation of monolithic heterojunction and buried layer GaAs lateral p-i-n photodetectors

“…The contact currents are determined by integrating the weighted electron, hole, and displacement current densities over the entire device volume. 12 A complete description of the STEBS-2D model can be found in Refs. 10 and 11.…”

Transit time of electrons and holes in micron and submicron MSM photodetectors

“…In expression ( 6) h(t) is the total current, J denotes the particle current density, D = (E ph + E) is the electric displacement vector and S is the area of the electrode. The total photodetector current is determined using the formalism given in [13,14], which has been generalized for an MSM photodetector. The calculation is done starting from relation (6) and using conformal mapping of the MSM-PD structure [10].…”

Theoretical study of a GaAs lateral p-i-n photodetector

“…The weighted electron, hole, and displacement current densities are integrated over the volume of the device to determine the contact current. 14 The parameters used to characterize the model are collected in Table I. [15][16][17][18] The figures of merit used to characterize the performance of a LPIN photodiode include the illuminated current voltage characteristics, dark current, 3 dB bandwidth, and capacitance.…”