Transit time of electrons and holes in micron and submicron MSM photodetectors

Abstract

In this paper we analyse the transit time of electrons and holes in the metal-semiconductor-metal photodetector (MSM-PD). A phenomenological model is used for 2D numerical simulation of carrier transport and intervalley transfer. It is shown that for submicron dimensions the response time depends almost equally on electron and hole transit times, while for micron dimensions it is mostly determined by holes.

Optimization of a resonant cavity enhanced MSM photodetector

“…Transfer times depend on the electric field [8][9][10]. The application of the phenomenological model for the calculation of carrier transport in the micron and submicron devices with an inhomogeneous distribution of the electric field is presented in [8][9][10][11][12][13][14][15]. The system of transport equations reads [10][11][12][13][14]:…”

“…The transport in the structure mapped that way is described in one dimension only, and the other coordinate is a parameter. The calculation of the photodetector current is done starting from relation (13) and using conformal mapping of the MSM-PD structure [12].…”

“…It was thus of interest to develop a numerically more convenient model, that would simultaneously model the response of both micron and submicron-sized MSM photodetectors. The model which largely satisfies this requirement for the two-valley semiconductors is the phenomenological model of transport equations [7][8][9][10][11][12][13][14][15][16].…”