Calculation of band offsets in Cd1−xXxTe alloys, X=Zn, Mg, Hg and Mn and magnetic effects in CdMnTe

Spin-dependent transport in II-VI magnetic semiconductor resonant tunneling diode

“…1 for spin up and spin down with magnetic field B ¼ 1 T and temperature T ¼ 5 K. Following our previous theoretical work, in which we calculated band offsets, we assume the barrier height between CdMgTe and CdMnTe, taking into account magnetic effects, to be 200 meV. 41 The p-d exchange interaction between the spin of injected carriers and the spin of Mn ions V rz (z), calculated within the mean field approximation, is illustrated in Fig. 2 as a function of magnetic field B for different temperatures for both spin up and spin down.…”

Mn Concentration and Quantum Size Effects on Spin-Polarized Transport Through CdMnTe Based Magnetic Resonant Tunneling Diode

“…This splitting between the two orientations of holes increases with B and saturates for high values of magnetic field, but decreases when the temperature augments. And, following our previous theoretical work where we have calculated the band offsets, 35 we assume the barrier height between CdMgTe and CdMnTe, taking into account magnetic effects, to be 200 meV. The valence band potential profile of the modeled magnetic RTD is shown in the inset of increasing Mn concentrations.…”

Controlling Densities of Manganese Ions and Cadmium Vacancies in Cd1–xMnxTe Ultrasmall Quantum Dots in a Glass Matrix: x-Concentration and Thermal Annealing

“…1,16−19 To understand Cd 1−x Mn x Te NCs, the magnetic and optical properties of CdTe and MnTe must be analyzed given that MnTe forms at manganese concentrations greater than x = 1 but forms CdTe in the absence of manganese. 20 Cadmium telluride (CdTe) is classified as both a II−VI semiconductor with an exciton Bohr radius of 6.5 nm and a p-type semiconductor due to cadmium vacancies (V Cd ). 21 In addition, CdTe has a band gap energy of 1.5 eV (826.5 nm) at room temperature and absorbs and emits in the infrared optical window.…”

“…Manganese-doped CdTe (Cd 1– x Mn x Te) NCs are promising materials in applications such as nuclear radiation detectors, − terahertz electromagnetic radiation, photovoltaic energy conversion, and nonlinear Faraday processes . Given their potential, a new synthesis methodology for Cd 1– x Mn x Te NCs was developed. ,− To understand Cd 1– x Mn x Te NCs, the magnetic and optical properties of CdTe and MnTe must be analyzed given that MnTe forms at manganese concentrations greater than x = 1 but forms CdTe in the absence of manganese . Cadmium telluride (CdTe) is classified as both a II–VI semiconductor with an exciton Bohr radius of 6.5 nm and a p-type semiconductor due to cadmium vacancies (V Cd ) .…”