CaF2 growth as a buffer layer of ZnO/Si heteroepitaxy

Koike, Kazuto; Komuro, T.; Ogata, Kenichi; Sasa, Shigehiko; Inoue, M.; Yano, Mitsuaki

doi:10.1016/j.physe.2003.11.108

Cited by 33 publications

(18 citation statements)

References 9 publications

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“…We attribute the small ratio of ZnO to a large dark current resulted from a low resistivity of $ 1:6 Â 10 À1 Ocm (n E 2 Â 10 18 cm -3 and m % 20 cm 2 =Vs; which are one decade larger and five times smaller, respectively, than those of our ZnO films grown on sapphire substrates [7,8]). Note that this resistivity increases dramatically by the alloying with MgO; roughly two orders of magnitude increases at x ¼ 0:3: We should also note that the leakage current via substrate is small due to the insulating CaF 2 layer; if the leakage current dominated the photoresponse, photoresponsivity at l4l C should increase contrary to the experimental data as a result of photogenerated carriers in Si substrates.…”

Section: Article In Pressmentioning

confidence: 70%

“…Upon the low-temperature (LT) ZnO layer, 400-nm-thick Zn 1Àx Mg x O alloy films with different x values were grown at 400 1C. Details of the growth procedure are similar to those reported elsewhere [6,7].…”

Section: Methodsmentioning

confidence: 99%

“…Previously, we succeeded in the growth of single-crystal (0 0 0 1)-oriented ZnO films on (1 1 1)-oriented Si substrates by molecular beam epitaxy (MBE), where a thin CaF 2 buffer layer was employed to prevent the oxidation of Si surface [6,7]. In this work, we apply the growth technique to single-crystal Zn 1Àx Mg x O alloy films on Si(1 1 1) substrates and study their photoresponsivity.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications

Koike

Hama

Nakashima

et al. 2005

Journal of Crystal Growth

176

104

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Section: Article In Pressmentioning

confidence: 70%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications

Koike

Hama

Nakashima

et al. 2005

Journal of Crystal Growth

176

104

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“…A variety of buffer layers were used in the growth of the ZnO films, including MgO [6], CaF 2 [7], and ZnS [8], to reduce the residual stress and film defects. The resulting buffer layers improved the crystalline quality and optical properties of ZnO.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of ZnO Films Deposited on Poly 3C-SiC Buffer Layer by Sol-Gel Method

Phan¹,

Chung²

2011

Transactions on Electrical and Electronic Materials

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Keywords: Zinc oxide nanoparticles, 3C-SiC buffer layer, Sol-gel method This work describes the characteristics of zinc oxide (ZnO) thin films formed on a polycrystalline (poly) 3C-SiC buffer layer using a sol-gel process. The deposited ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence (PL) spectra. ZnO thin films grown on the poly 3C-SiC buffer layer had a nanoparticle structure and porous film. The effects of post-annealing on ZnO film were also studied. The PL spectra at room temperature confirmed the crystal quality and optical properties of ZnO thin films formed on the 3C-SiC buffer layer were improved due to close lattice mismatch in the ZnO/3C-SiC interface.

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“…In addition, some others enhance the ultraviolet emission by depositing ZnO films with different buffers, such as MgF 2 , CaF 2 , ZnO, GaN. [9][10][11][12] TiO 2 as a wide band-gap semiconductor has been widely investigated due to its high refractive index, 13) good photocatalytic behavior, 14) and high transparency in visible range. 15) Moreover, Cho and Lee 16) have obtained high quality rutile TiO 2 thin film using ZnO buffer layer on Si(100) substrate, it demonstrated that TiO 2 and ZnO can be taken as buffer each other.…”

Section: Introductionmentioning

confidence: 99%

Influence of TiO<SUB>2</SUB> Buffer on Structure and Optical Properties of ZnO Film on Si(100) Substrate

et al. 2010

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ZnO films were prepared on p-Si (100) substrates by direct current (DC) sputtering with and without TiO 2 buffer. The crystal structures, surface morphologies and optical properties were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence (PL). XRD results indicated that the growth mode of ZnO film was changed from strong (002) preferential orientation to several crystal orientations by introducing TiO 2 buffer, and the residual strain was reduced. SEM manifested that ZnO film with TiO 2 buffer had the uniform grain size and flat surface. In addition, stronger ultraviolet emission was observed from ZnO film with TiO 2 than that without at room temperature. The low temperature photoluminescence was investigated to understand the different PL mechanism of ZnO films.

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CaF2 growth as a buffer layer of ZnO/Si heteroepitaxy

Cited by 33 publications

References 9 publications

Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications

Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications

Characteristics of ZnO Films Deposited on Poly 3C-SiC Buffer Layer by Sol-Gel Method

Influence of TiO<SUB>2</SUB> Buffer on Structure and Optical Properties of ZnO Film on Si(100) Substrate

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