Abstract:ZnO films were prepared on p-Si (100) substrates by direct current (DC) sputtering with and without TiO 2 buffer. The crystal structures, surface morphologies and optical properties were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence (PL). XRD results indicated that the growth mode of ZnO film was changed from strong (002) preferential orientation to several crystal orientations by introducing TiO 2 buffer, and the residual strain was reduced. SEM manifested t… Show more
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