C-V Measurement of HfO<sub>2</sub> Dielectric Layer Received by UV Stimulated Plasma Anodizing

Bibilashvili, Amiran; Kushitashvili, Zurab

doi:10.1088/1755-1315/44/5/052008

Cited by 4 publications

(1 citation statement)

References 9 publications

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“…To investigate the dielectric constant of SiN x film, we have fabricated Metal-Insulator-Semiconductor (MIS) Capacitors with SiN x as insulating material on p-type Si substrate and Cr/Au(3/60 nm) is deposited for metal contacts using thermal evaporator [22]. SiN x is deposited with silane rate varying from (4 sccm to 35 sccm) and at constant flow rate of ammonia (40 sccm) and different deposition temperature.…”

Section: Characterization Of Sin X Filmsmentioning

confidence: 99%

PECVD grown silicon nitride ultra-thin films for CNTFETs

Gangavarapu

Sharma

Naik

2019

Semicond. Sci. Technol.

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As-fabricated carbon nanotube field effect transistors (CNTFETs) exhibit p-type nature. In this work, silicon nitride (SiN x ) films are deposited on CNTs to realize n-type CNTFETs. This method of fabricating n-type CNTFETs is advantageous as SiN x film serves both as a passivation layer and as a top-gate dielectric. There has been extensive work done on SiN x passivation phenomena previously, but very few have investigated the properties of ultra-thin SiN x films with thickness less than 20 nm. In this work, the ultra-thin SiN x films are deposited using plasma enhanced chemical vapor deposition (PECVD) method. This paper discusses the systematic investigation of the effect of PECVD process parameters such as flow rates of precursor gasses (NH 3 , SiH 4 ), power of electrodes and deposition temperature on the properties of SiN x films such as refractive index, dielectric constant and stoichiometry. The quality of the SiN x thin films obtained is comparable with several reports that have investigated thicker films. Using these ultra-thin SiN x films, we implement a CNTFET based logic inverter. The results indicate that ultra-thin films of SiN x have great potential in future transistor technology.

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Section: Characterization Of Sin X Filmsmentioning

confidence: 99%