c-Si solar cells formed from spin-on phosphoric acid and boric acid

Yadav, Akash; Singh, Gajendra; Nekovei, Reza; Jeyakumar, R.

doi:10.1016/j.renene.2015.01.055

Cited by 28 publications

(11 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For POCl 3 technique, phosphorus source is supplied during the whole process while with the DB/EDB techniques, the source is limited which came from the deposited H 3 PO 4 film. These methods agreed with the results presented by other researchers (Ahmad et al 2017;Yadav et al 2015).…”

Section: Methodssupporting

confidence: 93%

Optimization of Phosphoric Acid-Based Emitter Formation on Silicon Wafer

Ahir¹,

Sepeai²,

Zaidi³

2018

JKUKM

View full text Add to dashboard Cite

Crystalline silicon (c-Si) wafer-based solar cells have been dominating the current photovoltaic industries. However, prevalent manufacturing practices are based on environmentally-harmful chemicals and expensive methodologies. This paper reports on the development of inexpensive, environmentally-benign phosphoric acid-based emitter formation methods as an alternative to conventional highly toxic and poisonous POCl 3 gas source-based chemistry. Two emitter formation approaches at temperatures in 850-925 o C range have been investigated. The first approach is referred to as the doctor blade (DB) technique, where the flat Si wafer surface is uniformly coated by phosphoric acid (H 3 PO 4 ) via a moving blade. A small gap between the blade and wafer is maintained in order to form a thin uniform film on the wafer. The second method is referred to as the extension of the blade method (EDB), where an un-doped wafer is placed proximately to the deposited H 3 PO 4 wafer. During the high temperature drive-in process, phosphorous emitter was formed on the un-doped wafer surface through evaporation and deposition of phosphorus atoms from H 3 PO 4 coated wafer. All diffusion processes were carried out on 180 µm thick, planar boron-doped Si wafers in a conventional quartz tube furnace. The variation of sheet resistances over a broad range from ~20-180 Ω/sq were consistent with temperature dependence. Highest diffusion uniformity was observed for 10% H 3 PO 4 solution. Diffusion process simulations based on DifCad software were in good agreement with experimental data. The work reported here illustrates that an environmentally-benign approach in emitter formation based on H 3 PO 4 is feasible for manufacturing solar cells. ABSTRAKSel suria berasaskan wafer silikon hablur (c-Si) telah mendominasi industri fotovoltan masa kini. Walau bagaimanapun, amalan pengilangan lazim adalah berdasarkan penggunaan bahan kimia yang berbahaya dan kaedah yang mahal. Kertas kajian ini melaporkan tentang pembangunan kaedah pembentukan pemancar yang murah, mesra alam sekitar berasaskan asid fosforik sebagai alternatif kepada bahan bertoksik dan sumber gas kimia beracun konvensional berasaskan POCl 3 . Dua pendekatan pembentukan pemancar pada julat suhu o C dikaji. Pendekatan pertama merujuk kepada teknik bilah doktor (DB), di mana permukaan rata wafer Si disalut secara seragam oleh asid fosforik (H 3 PO 4 ) melalui bilah bergerak. Jurang kecil diantara bilah dan wafer dikekalkan bagi membentuk satu filem nipis seragam di atas wafer. Kaedah kedua merujuk kepada teknik bilah doktor lanjutan (EDB) dimana wafer tidak terdop diletakkan berhampiran dengan wafer yang telah dimendapkan dengan filem H 3 PO 4 . Semasa proses pandu masuk bersuhu tinggi, pemancar fosforus terbentuk di atas permukaan wafer tidak terdop melalui penyejatan dan pemendapan atom fosforus dari wafer bersalut H 3 PO 4 . Semua proses peresapan dijalankan ke atas wafer silikon terdop boron berstruktur satah dengan ketebalan 180 µm di dalam relau tiub kuarza konvensional. Variasi rintan...

show abstract

Section: Methodssupporting

confidence: 93%

Optimization of Phosphoric Acid-Based Emitter Formation on Silicon Wafer

Ahir¹,

Sepeai²,

Zaidi³

2018

JKUKM

View full text Add to dashboard Cite

show abstract

“…In the same way, holes are flowing from the n-type semiconductor layer to the p-type absorber CIGS layer and collected by the electrical back contact. An additional mechanism in the CIGS layer is the back surface field (BSF) created by a Ga gradient that reflects electrons toward the p-n junction and finally collected by the n-type electrode BSF reduces minor carrier recombination at the interface of CIGS and the electrical back contact side of the device (Ramanujam and Singh, 2017;Singh et al, 2014;Yadav et al, 2015).…”

Section: Extrinsic Structurementioning

confidence: 99%

Review of CIGS-based solar cells manufacturing by structural engineering

et al. 2020

View full text Add to dashboard Cite

The design and development of the next-generation power-efficient CIGS solar cells are at the research forefront due to their potential applications in renewable energy. Due to rich fundamental properties such as chemical and physical structures of the CIGS layer, cell scaffolding, and its promising applications like low cost, easy integration, and high efficiency, the CIGS-based solar cell systems are of considerable interest and received tremendous attention. In this article, we review the CIGS solar cells from the point of view of structural engineering. We explain the intrinsic parts of crystalline, optical, and electronic structures of the CIGS absorber layer up to the extrinsic part of the cell multilayer structure. For intrinsic structure, we primarily review the modification of the crystallinity or chemical composition of the CIGS and the effects that these modifications have on the physical properties such as the adjustment of the bandgap grading, effect of impurity or doping, selenization, oxidation processes, and the surface morphology and structure orientation. For extrinsic structure, the effect of substrates, electrical back contact, windows, n-buffer, grid, and antireflection layers will be discussed further, as well as the possibility of their tandem use with other solar cell thin films.

show abstract

“…This is done in order to reduce the minority carrier recombination in that region and to push electrons towards the junction to be ultimately collected by the n-type electrode. 40,41 Flexible and lightweight CIGS-based solar cells have a fast growing market. They have been successfully developed on the polyimide substrate where laser scribing is used to achieve monolithic integration.…”

Section: Copper Indium Gallium Selenide Thin Filmmentioning

confidence: 99%