C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

Kawarada, Hiroshi; Tsuboi, Hidetoshi; Naruo, T.; Yamada, Tetsuya; Xu, Dehong; Daicho, Akira; Saito, Toshiki; Hiraiwa, Atsushi

doi:10.1063/1.4884828

Cited by 173 publications

(73 citation statements)

References 26 publications

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“…At 523 K, the SS value is close to that predicted by Equation (3), if C it is assumed to be unchanged. [41] As shown above, the MIMS-FET combines the merits of MOSFET and MESFET. This is possibly due to the appearance of a negative C it capacitance.…”

Section: Resultsmentioning

confidence: 99%

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Liao

Sang

Shimaoka

et al. 2019

Adv Elect Materials

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tical applications due to the high input impedance, breakdown voltage, and integration ability. Tremendous efforts have been made to achieve low subthreshold swing (SS) MOSFETs on low-dimensional materials to overcome the thermal limit of 60 mV dec −1 in conventional CMOS technology. [8][9][10] On the other hand, growing attention has also been paid to the extreme semiconductors MOSFETs based on 2DHG and 2DEG for the applications in high-power, high-frequency, and high temperature electronics. [11][12][13] However, state-of-the-art conventional MOSFETs based on low-dimensional channels such as 2DHG or 2DEG always exhibit normally on (depletion mode) behavior and show uncertainty in threshold voltage. [8][9][10][11][12][13][14][15][16] Energy-efficient normally off (enhancement mode) FETs with low SS values and tunable threshold voltage are strongly in demand from the viewpoint of energy-saving, safety aspects, gate reliability, and electronic circuit simplicity. [17] Junction FET by using p-n junction or Schottky metal gate can achieve normally off operation. [18,19] Nevertheless, many wide-bandgap semiconductors suffer from"asymmetric doping" limitation. For example, n-type dopants with shallow energy levels in diamond and stable p-type doping in ZnO are notoriously difficult. [20,21] For 2D semiconductors, p-n junctions at the MOSFET level has not been achieved yet. These bottlenecks makes inversion-type enhancement-mode MOSFETs difficult, although initial results were reported. [22] While for metal-semiconductor FETs (MES-FETs), there is an intrinsic problem of forward bias limitation. Normally off MOSFETs were reported through channel structure modification, [23] defective gate oxides, [24,25] surface treatments, [26][27][28][29] and ion implantation. [30] However, in most of the cases, the principle is based on the generation of defects, which degrade the device performance as well as the controllability. The formation of recess structure at the gate can successfully lead to normally off operation for 2DEG at the AlGaN/GaN interface, [31] but not applicable to H-terminated diamond and low-dimensional semiconductors.In this work, we propose and demonstrate the device concept of metal-insulator-metal-semiconductor FET (MIMS-FET) based on a 2DHG channel to overcome the drawbacks of MOSFET and MESFET. We show that the MIMS-FET exhibits normally off operation, low subthreshold swing ≈76 mV dec −1 , high drain current, high on/off current ratio over 10 9 , and low gate leakage. These electrical properties are thermally stable up 2D electron and hole gases (2DEG or 2DHG) based on semiconductor surface/interface or 2D materials are promising for next-generation integrated circuits and high-frequency and -power electronics. To reduce power consumption, normally off operation and low-switching-loss metal-oxide fieldeffect transistors (MOSFETs) based on 2DEG or 2DHG are highly in demand. The present methods to achieve normally off MOSFETs have various shortcomings such as reduction in carrier mobility, sacrifice of dra...

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Section: Resultsmentioning

confidence: 99%

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Liao

Sang

Shimaoka

et al. 2019

Adv Elect Materials

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“…Since the first n‐type doping by chemical vapor deposition , a lot of progresses have been done in terms of n‐type and p‐type doping control in a wide concentration range. Combined to the successful achievement of functional diamond/oxide and diamond/metal interfaces, the excellent diamond properties have been confirmed by some devices performances (Schottky barrier diodes ), pin diodes (), MESFET (), JFET (), Hydrogenated‐diamond FET ). Recently, Traoré et al.…”

Section: Introductionmentioning

confidence: 85%

Effect of n‐ and p‐type doping concentrations and compensation on the electrical properties of semiconducting diamond

Traoré

Koizumi

Pernot

2016

Physica Status Solidi (a)

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We report an exhaustive description of electrical properties of mono‐crystalline diamond epilayers doped with boron and phosphorus impurities. Carrier density, carrier mobility, and resistivity have been calculated for boron and phosphorus doped diamond as a function doping level and a compensation for values ranging between 1014 and 1020thinmathspacecm−3 at two different temperatures of 300 and 500 K. The calculated values are graphically compared with experimental data from the literature and discussed in terms of device performances. Finally, an example of use of the graphics is given by comparing the IV characteristics of the first pn diamond junction with our calculations. Theoretical hole mobility as function of acceptor concentration and compensation at 300 and 500 K. The symbols are experimental data from references given in the text.

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“…Because of its wideband gap, high thermal conductivity and high carrier mobility, diamond is considered to be one of the promising candidate materials to realize future high performance electronic devices. Part of its characteristics has been confirmed by current devices, such as diodes and transistors [5][6][7] made of diamond, which show its rapid response and stable performance at high temperatures [8]. For this application, defects underlying the electrodes cause leakage current [9].…”

Section: Introductionmentioning

confidence: 92%

Dielectric properties of single crystalline diamond wafers with large area at microwave wavelengths

Yamada

Meier

Mazzocchi

et al. 2015

Diamond and Related Materials

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C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

Cited by 173 publications

References 26 publications

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Effect of n‐ and p‐type doping concentrations and compensation on the electrical properties of semiconducting diamond

Dielectric properties of single crystalline diamond wafers with large area at microwave wavelengths

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