C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps

Jabbari, Iraj; Baïra, M.; Maâref, H.; Mghaieth, Ridha

doi:10.1016/j.physe.2018.07.035

Cited by 14 publications

(7 citation statements)

References 45 publications

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“…High Al content leads to higher thermal management mechanisms, which proves that AlGaN/GaN devices can be suitable for power switching applications 9 . Two deep trap levels were identified due to which hysteresis effect and a negative shift was observed in the device's C – V characteristics 10 …”

Section: Introductionmentioning

confidence: 98%

“…9 Two deep trap levels were identified due to which hysteresis effect and a negative shift was observed in the device's C-V characteristics. 10 Gate leakage is one of the recurring issues in HEMTs degrading the performance of the device. Oxide or dielectric layers were incorporated near the gate and barrier regions to overcome gate leakage effects, forming a Metal Oxide Semiconductor-High Electron Mobility Transistor (MOS-HEMT).…”

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confidence: 99%

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Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS‐HEMT using Cubic Spline Interpolation technique

Viswanathan

Pravin

Arasamudi

et al. 2021

Int J Numerical Modelling

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Traps present at the interface of oxide and barrier layers influence the device's DC and RF parameters. An investigation is carried out on the distribution of interface traps present in the AlGaN/GaN/AlInN Metal Oxide Semiconductor‐High Electron Mobility Transistor (MOS‐HEMT) structures. By incorporating Hafnium Oxide (HfO2) as a dielectric layer, the DC and RF parameters like current drive and Power‐Added Efficiency (PAE) for the device are evaluated. The Capacitance‐Voltage (C–V) curves showed a shift in its values upon increase in trap density, which attributes to the position of fermi level once the threshold voltage is reached. A theoretical estimation of interface trap densities revealed distributions in the magnitude of 9.52 × 1012 cm−2 eV−1 near the mid‐gap and around 3.4 × 1013 cm−2 eV−1 at the Conduction Band (CB) edge. Carrier concentration at the Two‐Dimensional Electron Gas (2DEG) influences the distribution of traps at the interface, which in turn affects the on‐resistance of the device. Cubic Spline Interpolation (CSI) technique is employed here to model the device parameters precisely. The higk‐K dielectric material causes a high cut‐off of 201 GHz for the MOS‐HEMT. There is about 42% improvement in the PAE compared to the conventional MOS‐HEMT device. The comparably low trap density values (1012 cm−2 eV−1) than the conventional ones, prove the high quality gate passivation features of the HfO2/AlGaN interface and could serve as a potential candidate for high power and microwave applications.

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Section: Introductionmentioning

confidence: 98%

mentioning

confidence: 99%

Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS‐HEMT using Cubic Spline Interpolation technique

Viswanathan

Pravin

Arasamudi

et al. 2021

Int J Numerical Modelling

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“…When dielectrics are used for insulation, the threshold voltage of the MOS-HEMT tends to shift negatively. There are traps grown in AlGaN/GaN HEMTs which provoke a negative shift in the pinch-off voltage and cause the occurrence of parasitic effects in the device [7]. InGaN back-barriers are used to eliminate parasitic effects in AlGaN/GaN devices [8].…”

Section: Introductionmentioning

confidence: 99%

Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT

Sandeep¹,

Pravin²

2021

J. Nano- Electron. Phys.

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The device performance of AlGaN/InGaN/GaN Double Heterostructure Metal-Oxide-Semiconductor High Electron Mobility Transistor (DH MOS-HEMT) upon using 10 nm thick Zirconium Dioxide (ZrO2) as dielectric is studied here. Oxide dielectrics play an important role in forming Two-Dimensional Electron Gas (2DEG). An analytical model is proposed for evaluating the charge density, carrier concentration, drain current, transconductance, and gate capacitance of the device. ZrO2 based DH MOS-HEMTs display exceptional performances such as maximum drain current density (IDmax) and transconductance (gmmax) in comparison to InGaN based HEMTs. Due to the high-quality 2DEG ace between ZrO2 and the AlGaN barrier layer, the MOS-HEMT demonstrates excellent carrier concentrations and gate capacitances. Also, electrostatic analysis at various interfaces is carried out and the impact of InGaN layer thickness over the 2DEG enhancement is investigated. An exceptional agreement is formed between the experimental results from the literature and the produced outputs. Incorporating a strong high-k dielectric material like ZrO2 results in an effective leakage suppression in the range of 10 -7 mA/mm. The results show that the device could be a feasible solution for both high-power switching and microwave applications.

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“…It is known that the operating characteristics of electronic devices deteriorate with increasing temperature [1][2][3]. For the ultraviolet emission mechanism, for example, the population distribution in excitonic states varies depending on phonon occupation or phonon temperature, and an expansion of the population distribution reduces the excitonic emission rate and efficiency [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Local Heat Energy Transport Analyses in Gallium-Indium-Nitride/Gallium Nitride Heterostructure by Microscopic Raman Imaging Exploiting Simultaneous Irradiation of Two Laser Beams

Okamoto

Saito

Ito

et al. 2020

ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystem

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Local heat transport in two GaxIn1-xN/GaN-heterostructures on sapphire substrates is investigated by microscopic Raman imaging using two lasers of 532 nm (Raman observation) and 325 nm (heat generation and Raman observation), which enables the separation of heat generation and Raman observation positions. It is found that E2(high) and A1(LO) modes of the Ga0.84In0.16N layer exhibit mutually different characteristics, which indicates the analysis of the occupation of the A1(LO) mode is available. E2(high) mode of the GaN layer observed by the 532-nm laser reveals that the transport of the heat energy generated in the Ga0.84In0.16N layer to the GaN under layer is blocked in the high-density area of misfit dislocation in the vicinity of the heterointerface.

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C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps

Cited by 14 publications

References 45 publications

Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS‐HEMT using Cubic Spline Interpolation technique

Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS‐HEMT using Cubic Spline Interpolation technique

Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT

Local Heat Energy Transport Analyses in Gallium-Indium-Nitride/Gallium Nitride Heterostructure by Microscopic Raman Imaging Exploiting Simultaneous Irradiation of Two Laser Beams

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