C‐band 60 W GaN power amplifier MMIC designed with harmonic tuned approach

Abstract

A C-band GaN high power amplifier (HPA) microwave monolithic integrated circuit (MMIC) with second harmonic tuned circuits is presented. The MMIC is designed with three stages to ensure high gain, and the final stage is matched with optimised second harmonic impedance to improve the power added efficiency (PAE). Experimental results show that the class AB GaN HPA MMIC, with drain voltage of 28 V, can be realised with more than 40% PAE and 60 W output power, with associated gain of 25 dB, in 5-6 GHz at 100 μs pulse width and 10% duty cycle. The chip area is 3.2 × 5.3 mm (16.96 mm).

X‐band 12 W power amplifier MMIC designed with second harmonic suppression

“…The second harmonic tuning cells described in Figure were utilized in the input port of power stage to improve the PAE …”

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High power‐handling SPDT switch in 0.25‐µm GaN technology

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