Buried recombination layers with enhanced n-type conductivity for silicon power devices

Wondrak, W.; Silber, D.

doi:10.1016/0378-4363(85)90594-7

Cited by 26 publications

(21 citation statements)

References 5 publications

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“…Moreover, H + implantation in silicon can create hydrogen‐related donor (HD) states if appropriate annealing procedures are employed; such post‐implantation annealing steps are typically carried out at temperatures between 300 and 500 °C ( e.g ., Ref. 4–6). The advantage of using proton implantation for the generation of deep n‐type‐doped layers within silicon wafers is that for a given implantation energy, the projected ranges of the protons are much higher as compared to conventional donor ions such as phosphorus; therefore, the wafer can be modified in a much wider spatial range for similar costs and effort.…”

Section: Introductionmentioning

confidence: 98%

Defect engineering for modern power devices

Job

Laven

Niedernostheide

et al. 2012

Physica Status Solidi (a)

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Radiation‐induced defects are a common tool in the manufacturing of modern power semiconductor devices. Hydrogen‐related doping is a feasible method to introduce deep doping profiles with a low thermal budget. The hydrogen‐related donors (HDs) require radiation damage and hydrogen, which can be induced by different methods, e.g., proton implantation, helium and proton co‐implantation, or an implantation followed by a hydrogen‐plasma step. The choice of these methods significantly affects the introduction efficiency of the donors and the necessary post‐implantation thermal budget. By controlling the hydrogen‐to‐damage ratio, the manufacturing process of the HD profiles may be moved on a trade‐off between the activation efficiency and the necessary thermal budget. A low hydrogen‐to‐damage ratio leads to an increased activation of the HDs, whereas a high hydrogen‐to‐damage ratio reduces the necessary diffusion time of the hydrogen during the post‐implantation anneal. For the technical usage of hydrogen‐related doping, knowledge of an efficient process window is desirable. In this paper, we consider proton implantation, helium and proton co‐implantation, and a proton implantation followed by a hydrogen‐plasma step as different introduction methods of HD profiles with regard to the activation efficiency of the HDs and the necessary thermal budget.

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Section: Introductionmentioning

confidence: 98%

Defect engineering for modern power devices

Job

Laven

Niedernostheide

et al. 2012

Physica Status Solidi (a)

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“…Alternative approaches have been used to adjust the charge carrier lifetime like the diffusion of gold [4] or platinum [5] but lifetime control via the implantation of light particles is a rather simple approach where a damage profile with a maximum at the implantation depth is formed [6,7]. This works very well up to implantation doses of 10 12 H + /cm², because of the formation of additional H-related thermal donor complexes [8,9]. This makes helium in comparison to hydrogen, where only damage but no donors form, a more suitable candidate for charge carrier lifetime control [10].…”

Section: Introduction Because Protons (H +mentioning

confidence: 99%

“…The concentration and type of these thermal donors strongly depend on the annealing temperature and annealing time [12][13][14][15][16] the formation and dissociation process of these donor complexes was investigated in various studies using deep level transient spectroscopy [17], infra-red spectroscopy [18], electron paramagnetic resonance [19] and spreading resistance profiling [20]. One important application of H + implantation doping is as a field stop of an Isolated Gate Bipolar Transistor (IGBT) [8]. A third application of hydrogen implantations is to cleave the top layer of a wafer off in the so called Smart Cut process [21,22].…”

Section: Introduction Because Protons (H +mentioning

confidence: 99%

High dose proton implantations into silicon: a combined EBIC, SRP and TEM study

Kirnstoetter

Faccinelli

Gspan

et al. 2014

Phys. Status Solidi C

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Proton (H+) implantations are used in power semiconductor devices to introduce recombination centers (Hazdra et al., Microelectron. J. 32(5), 449–456 (2001)) or to form hydrogen related donor complexes (Zohta et al., Jpn. J. Appl. Phys. 10, 532–533 (1991)). Proton implantations are also used in the 'smart cut' process to generate defects that can be used to cleave thin wafers (Romani and Evans, Nucl. Instrum. Methods Phys. Res. B 44, 313–317 (1990)). However, the implantation damage resulting from H+implantations is not completely understood. In this study, protons with energies from 400 keV up to 4 MeV and doses up to 1016 H+/cm² were implanted into highly ohmic boron doped m:Cz silicon (100). Electron Beam Induced Current (EBIC) measurements were performed to locally determine the minority charge carrier diffusion length. The diffusion length decreases with increasing implantation dose and incorporated damage. Spreading Resistance Profiling (SRP) measurements were performed to analyze the charge carrier concentration profiles for different annealing procedures. The electrical activation and growth of the defect complexes varies strongly with the annealing parameters. Transmission Electron Microscopy measurements were made to investigate the microscopic structures formed by the high dose implantation processes. Due to the high local damage density resulting from low energy and high dose H+ implants, platelet structures are formed. During high‐energy high‐dose H+implantations, the implanted hydrogen generates strain in the crystal lattice resulting in changes in the distances between atomic planes. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Irradiation of crystalline silicon with protons in the energy range of keV to MeV and successive annealing at temperatures up to 500 °C induces shallow donor type defects [3,4] with ionization energies of several 10 meV [5][6][7]. Previous investigations have shown that various different energy levels exist, depending on the temperature of the annealing step [6,8].…”

Section: Introductionmentioning

confidence: 99%

Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters

Laven

Schulze²,

Häublein

et al. 2011

AIP Conference Proceedings

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Composition change of stainless steel during microjoining with short laser pulse J. Appl. Phys. 96, 4547 (2004) Elemental surface analysis at ambient pressure by electron-induced x-ray fluorescence Rev. Sci. Instrum. 74, 1251 (2003 Nondestructive analysis of ultrashallow junctions using thermal wave technology Rev. Sci. Instrum. 74, 586 (2003) Images of dopant profiles in low-energy scanning transmission electron microscopy Appl. Phys. Lett. 81, 4535 (2002) Spreading-resistance profiling of silicon and germanium at variable temperature J. Appl. Phys. 92, 4809 (2002) Additional information on AIP Conf. Proc. Abstract. The impact of dose variations of protons implanted with energies in the MeV range on the concentration and depth distribution of hydrogen-related shallow donors in float zone and Czochralski silicon after annealing at 470 °C is examined with spreading resistance probe measurements. For moderate proton doses up to 10 14 cm -2 , the measured effective carrier distribution in float zone silicon correlates with the calculated distribution of the primary radiation damage caused by the penetrating protons. With increasing doses above 10 14 cm -2 , however, the effective carrier distribution significantly deviates from the distribution of the primary defects. Furthermore, the shape of the induced profiles in float zone and Czochralski silicon differ considerably. The effective carrier concentration at the maximum of the induced donor profile exhibits a linear dependency on the implanted dose after annealing around 370 °C, whereas this dependency becomes clearly sublinear when annealing at 470 °C. A temperature dependent model using two donor species is proposed which accounts for the different dose dependencies at the different annealing temperatures.

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Buried recombination layers with enhanced n-type conductivity for silicon power devices

Cited by 26 publications

References 5 publications

Defect engineering for modern power devices

Defect engineering for modern power devices

High dose proton implantations into silicon: a combined EBIC, SRP and TEM study

Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters

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