“…Likewise, the ITO−HTL interface has also been subjected to extensive empirical manipulation. Recent reports describe ITO surface modification by oxidative/protic chemical treatment, oxide overlayer physical vapor deposition, metal deposition, and amphiphile/polymer/monolayer chemisorption. 3a,b,, Details of the resulting interface structure(s) (e.g., contiguity, thickness, smoothness, microstructure, cohesion, and pinhole density) and mechanism(s) of action have generally been difficult to characterize; however, altering interfacial electric fields, ,13e balancing electron/hole injection fluences, reducing injected charge backscattering,13i confining electrons in the emissive layer,13k and minimizing anode Fermi level−HTL HOMO energetic discontinuities 13d,j,k have all been proposed. In each case, varying degrees of improved device performance such as lower turn-on voltage, greater thermal stability, and/or higher quantum efficiency have been reported.…”