1999
DOI: 10.1002/(sici)1096-9918(199908)28:1<186::aid-sia604>3.0.co;2-p
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Buried interfaces: interfacial interactions in materials for polymer-LED applications

Abstract: Chemical interactions at the interface between a precursor polymer for poly(p‐phenylenevinylene), namely poly(p‐xylylene‐α‐tetrahydrothiophene chloride), and an indium–tin–oxide (ITO) transparent electrode, have been studied through polymer films of > 10 nm thick using x‐ray photoelectron spectroscopy. The HCl released in the conversion process interacts with the surface of the ITO substrate at the polymer/substrate interface, leading to the formation of indium chloride, which then diffuses into the polymer. I… Show more

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Cited by 7 publications
(6 citation statements)
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“…The present observed increase in heterostructure quantum efficiency with anode dielectric functionalization is in partial phenomenological agreement with two other recent studies in which the microstructure and contiguity of dielectric structures, grown by non conformal line-of-sight physical vapor deposition techniques were not as well-characterized. For SiO 2 ,13d V turn - on was found to first fall and then rise with apparent increasing dielectric thickness, while for Al 2 O 3 , 15b,c V turn - on rises continuously with apparent increasing dielectric thickness. In both cases, the rationalization for this behavior has been better balance between hole and electron injection into the HTL and ETL, respectively.…”
Section: Discussionmentioning
confidence: 87%
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“…The present observed increase in heterostructure quantum efficiency with anode dielectric functionalization is in partial phenomenological agreement with two other recent studies in which the microstructure and contiguity of dielectric structures, grown by non conformal line-of-sight physical vapor deposition techniques were not as well-characterized. For SiO 2 ,13d V turn - on was found to first fall and then rise with apparent increasing dielectric thickness, while for Al 2 O 3 , 15b,c V turn - on rises continuously with apparent increasing dielectric thickness. In both cases, the rationalization for this behavior has been better balance between hole and electron injection into the HTL and ETL, respectively.…”
Section: Discussionmentioning
confidence: 87%
“…At each metal/semiconductor−organic interface, a barrier to charge injection exists that is poorly understood but doubtless dependent upon, among other factors, atomic scale microstructural details and the energetic alignment of the electrode Fermi levels with the HOMO or LUMO of the hole transport layer (HTL) or electron transport layer (ETL), respectively. ,,,− It has recently been observed that OLED response characteristics (quantum efficiency, turn-on voltage, and device robustness) can be dramatically altered by nanoscale modification of the electrode−organic interface and via mechanisms that are in a great many cases incompletely defined. 3f,5b,, Modifications to the ETL−metal cathode interface are variously postulated to increase the electron injection fluence into the ETL, to prevent migration of cathode metal ions into the ETL, 3f,5b,13e and to provide buffer layers to protect the ETL from sputter damage during cathode deposition 3c. Likewise, the ITO−HTL interface has also been subjected to extensive empirical manipulation.…”
Section: Introductionmentioning
confidence: 99%
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“…The surface of ITO glass is, however, notoriously chemically and physically ill-defined, to the detriment of its performance as the hole-injecting electrode in OLEDs. [4][5][6][7][8][9][10][11] Whilst numerous alternatives have been proposed in recent years, [12][13][14] their shortcomings are such that ITO remains the anode of choice.…”
Section: Introductionmentioning
confidence: 99%