2020
DOI: 10.1039/c9mh01749f
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Bulk ion-clustering and surface ion-layering effects on work function of self-compensated charged-doped polymer semiconductors

Abstract: Self-compensated hole- and electron-doped polyelectrolytes can afford 0.1 eV tuning steps in work function of charge injection/collection layers through the tethered anions. These material systems are further immune to ‘dopant’ migration.

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Cited by 11 publications
(22 citation statements)
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“…Crystallites of PT-COOH are seen in microscopic images in Figures f (confocal) and S3b (optical). PT-COOH shows self-doping effects from carboxylic acid groups. The negatively charged carboxylate stabilizes positive charges on the backbone by electrostatic interactions (Figure f), enabling higher hole carrier concentrations on the polymer backbone . The self-doping effects in PT-COOH are supported by our prior studies , of a large intrinsic hole concentration ( p 0 ) of 1.06 × 10 19 cm –3 for PT-COOH, compared to that of the P3HT film (2.4 × 10 17 cm –3 ).…”
Section: Resultssupporting
confidence: 60%
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“…Crystallites of PT-COOH are seen in microscopic images in Figures f (confocal) and S3b (optical). PT-COOH shows self-doping effects from carboxylic acid groups. The negatively charged carboxylate stabilizes positive charges on the backbone by electrostatic interactions (Figure f), enabling higher hole carrier concentrations on the polymer backbone . The self-doping effects in PT-COOH are supported by our prior studies , of a large intrinsic hole concentration ( p 0 ) of 1.06 × 10 19 cm –3 for PT-COOH, compared to that of the P3HT film (2.4 × 10 17 cm –3 ).…”
Section: Resultssupporting
confidence: 60%
“…20−22 The negatively charged carboxylate stabilizes positive charges on the backbone by electrostatic interactions (Figure 1f), enabling higher hole carrier concentrations on the polymer backbone. 22 The self-doping effects in PT-COOH are supported by our prior studies 23,30 of a large intrinsic hole concentration (p 0 ) of 1.06 × 10 19 cm −3 for PT-COOH, compared to that of the P3HT film (2.4 × 10 17 cm −3 ). This result also corresponds to a higher drain current in the organic field-effect transistor (OFET) device structure with PT-COOH (∼mA) as a semiconductor than with P3HT (∼μA) (Figure S4).…”
Section: ■ Results and Discussionmentioning
confidence: 55%
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“…N5 has the same polyfluorene semiconductor core and work function as N3, but a higher ion density for improved adhesion to ITO. 24,50 The JVL and Z-J characteristics are shown in Fig. 6c.…”
Section: Double Injection Heterostructures: Inverted Qledsmentioning
confidence: 99%
“…Materials. (3E,5E)-3,5-Bis(4-azido-3,5-difluoro-2,6-diisopropylbenzylidene)-1,1-dimethyl-4-oxopiperidin-1-ium trifluoromethanesulfonate (sFPA82-TfO) was synthesized in-house following Teo et al 25 T w o d i ff e r e n t m o l e c u l a r w e i g h t p o l y ( 9 , 9 -b i s ( 3 -(pentafluoroethanesulfonylimidosulfonyl)propyl)fluorene-2,7-diyl-alt-1,4-phenylene-(m-trifluoromethylphenylimino)-1,4-phenylene) sodium salts (mTFF-C 2 F 5 SIS-Na) were synthesized in-house following Ang et al 32 Their weight-average molecular weights (M w ) are determined by gel permeation chromatography (N,N-dimethylformamide, 0.1 M lithium bromide). The two mTFF-C 2 F 5 SIS-Na have a M w of 80k (PDI, 1.9) and 40k (PDI 1.6), respectively.…”
Section: ■ Methodsmentioning
confidence: 99%