Bulk Heterojunction Polymer Memory Devices with Reduced Graphene Oxide as Electrodes

Abstract

A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current-voltage (I-V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10(4)-10(5)) and low switching threshold voltage (0.5-1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

Tunable electrical memory characteristics by the morphology of self-assembled block copolymers:PCBM nanocomposite films

“…The memory switching behaviors of composite materials using various charge-storage filled additives (metal [17][18][19][20][21][22] or fullerene derivatives [23][24][25][26][27][28][29] ) in the supporting matrices were identified as being achieved via several proposed mechanisms, such as charge trapping/detrapping, 18,23,24 charge-transfer effect, 17,21,22,27-29 filament formation, 19,20 and polarization effect. 25,26 When the recording domains are down to the nanoscale, new materials and advanced techniques must be explored to satisfy the need of storage capacity.…”

Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics

“…In the last two decades, various functions of plastic devices have been demonstrated, including polymer light-emitting diodes (PLEDs) [4,5] for commercial flat panel displays and white solid lighting sources, polymer solar cells (PSCs) [6,7], polymer thin-film transistors [8][9][10][11], polymer lasers [12][13][14][15], polymer photodetectors [16][17][18][19], polymer memory for information storage [20][21][22][23][24][25] and others [26][27][28]. In this area, the basic open question pertaining to commercialization is to fabricate low-cost, stable and high-performance thin-film devices.…”

“…Self-assembly of p-n fully conjugated diblock copolymers can achieve nanostructured thin films with two ordered independent channels of electrons and hole. Thin-film nanoelectrodes such as nanocarbons (carbon nanotube and graphene) or silvers are a promising alternative to ITO (indium tin oxide) for organic flexible and stretchable electronics with the feature of enhanced light extraction [22,[89][90][91]. CP nanobuilding blocks and superstructured thin films mark the entry into a new realm in plastics electronics.…”

New Type Solar Cells: Persistence, Opportunity and Success

“…中国在新型 太阳能电池领域起步虽然较晚, 但在国家自然科学基金 委、科技部、中科院等部门的大力支持下获得了迅速发 展. 无论是传统的敏化太阳能电池和有机太阳能电池等 薄膜太阳能电池领域, 还是近年来活跃的钙钛矿新型太 阳能电池领域我国很多研究单位一直紧随世界潮流, 并 相继取得一批世界公认的研究成果, 如钌基染料敏化太 阳能电池 [7] 、三芳胺染料敏化太阳能电池 [8] 、小分子有 机薄膜太阳能电池 [9] 、石墨烯薄膜太阳能电池 [10] 、噻吩 聚合物太阳能电池 [11] 、聚富勒烯有机太阳能电池 [12] 、交 替共聚物太阳能电池 [13] 、 有机纤维太阳能电池 [14] 等相关 工作. 即使是最新的钙钛矿电池领域, 在诸如电池稳定 性 [15] 、 无空穴传输材料电池 [16] 及其工作机理 [17] 等方向上 …”