Built-in electric field assisted nucleation and coercive fields in ferroelectric thin films

Direct Observation of Capacitor Switching Using Planar Electrodes

“…[ 45 ] The resulting built-in fi elds at the two electrodes are antiparallel to each other, thus stimulating nucleation at the electrode where the built-in fi eld is oriented in the same direction as the switching fi eld. [ 43 ] In general, the higher the built-in fi eld the lower the applied external voltage to induce domain nucleation.…”

“…[42][43][44] The pinning centers, slowing down the capacitor switching. However, after capacitor cycling the domain wall velocity was strongly increased, which improved the capacitor switching dramatically for positive and negative voltages ( Figure 5 ).…”

Controlled Crystallization of Sodium Chloride Nanocrystals in Microdrop­lets Produced by Electrospray from an Ultra‐Dilute Solution

“…Secondly, the built-in electric field strength and ion strength increase in the charged microdroplets had a greater impact on crystal nucleation and growth. [28] It demonstrated that an increase in the built-in electric field strength and ion strength was more favorable for making crystals smaller and more regular with cubic shapes, as shown by the SEM analysis in Figure 2.…”

“…In the process, the built-in electric field and the ion strength of the solvent in the microdroplets can affect the nucleation and growth of crystals. [28] On the other hand, solvent evaporation from the microdroplets increased the ion concentration of the solution and decreased the sizes of the droplets, and this had a further effect on nucleation and the growth of crystals. [29] In addition, different evaporation rates in general resulted in various curves corresponding to increases in ion concentration and decreases in droplets size.…”

Influence of the ferroelectric–electrode interface on the characteristics of MFIS-FETs

“…They found that when the thickness of the ferroelectric layer decreases, the E c increases in the case of a metallic top electrode [8][9][10] and the dielectric response collapses [11,12]. These experiments and others, including the scenario related to surface pinning [13], the influence of an internal electric field on the domain nucleation in depleted films [14], and the presence of a non-ferroelectric layer (passive layer or dead layer) at the ferroelectric-electrode interface [4,8,15], were explained well by a number of developed theoretical models. However, these models paid a little attention to the influence of the interface layer on the characteristics of MFIS-FET.…”