Building Structures Atom by Atom via Electron Beam Manipulation

Dyck, Ondrej; Kim, Songkil; Jimenez−Izal, Elisa; Alexandrova, Anastassia N.; Kalinin, Sergei V.; Jesse, Stephen

doi:10.1002/smll.201801771

Cited by 95 publications

(110 citation statements)

References 70 publications

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“…While in 3D solids atomic level studies are often limited by the fact that reaction fronts are rarely uniform in the beam direction, the recent interest in 2D materials provides model systems in which visualization of virtually all atomic units during a reaction process is possible. 7 Particularly of interest are dynamic phenomena induced by the effect of the electron beam during the imaging. Traditionally, these effects were perceived as undesirable beam damage, where e-beam irradiation of the sample led to phase decomposition, sputtering, and other damage.…”

mentioning

confidence: 99%

Atomic Mechanisms for the Si Atom Dynamics in Graphene: Chemical Transformations at the Edge and in the Bulk

Ziatdinov

Dyck

Jesse

et al. 2019

Adv Funct Materials

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The dynamic behavior of e‐beam irradiated Si atoms in the bulk and at the edges of single‐layer graphene is examined using scanning transmission electron microscopy (STEM). A deep learning network is used to convert experimental STEM movies into coordinates of individual Si and carbon atoms. A Gaussian mixture model is further used to establish the elementary atomic configurations of the Si atoms, defining the bonding geometries and chemical species and accounting for the discrete rotational symmetry of the host lattice. The frequencies and Markov transition probabilities between these states are determined. This analysis enables insight into the defect populations and chemical transformation networks from the atomically resolved STEM data. Here, a clear tendency is observed for the formation of a 1D Si crystal along zigzag direction of graphene edges and for the Si impurity coupling to topological defects in bulk graphene.

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confidence: 99%

Atomic Mechanisms for the Si Atom Dynamics in Graphene: Chemical Transformations at the Edge and in the Bulk

Ziatdinov

Dyck

Jesse

et al. 2019

Adv Funct Materials

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“…Here, we show the possibility of moving Si impurities in SWCNTs via an out-of-plane "bond inversion" (direct exchange) process, [19] similar to what was recently achieved in graphene. [15,[20][21][22][23] We show that we are indeed able to manipulate them mainly along the axis of larger diameter tubes, where the atomic structure can be visualized and the local geometry resembles graphene. Using density functional theory based molecular dynamics (DFT/MD) simulations, we further explore the energetics of various dynamic processes as a function of tube diameter and chirality.…”

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confidence: 99%

“…Another experiment consisted of a series of repeated back-and-forth jumps along the armchair direction perpendicular to the axis of a large-diameter near-armchair tube. Figure 1d shows the path of the atom on what is likely a (22,18) SWCNT with a diameter of ∼2.67 nm, moving repeatedly between the two sublattices in a fully controlled manner.…”

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confidence: 99%

Electron‐Beam Manipulation of Silicon Impurities in Single‐Walled Carbon Nanotubes

Mustonen

Markevich

Tripathi

et al. 2019

Adv Funct Materials

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The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances in electron optics and microscope stability, but also in the preparation of suitable materials with impurity elements incorporated via ion and electron-beam irradiation or chemical means. Here it is shown that silicon heteroatoms introduced via plasma irradiation into the lattice of single-walled carbon nanotubes (SWCNTs) can be manipulated using a focused 55-60 keV electron probe aimed at neighboring carbon sites. Moving the silicon atom mainly along the longitudinal axis of large 2.7 nm diameter tubes, more than 90 controlled lattice jumps were recorded and the relevant displacement cross sections estimated. Molecular dynamics simulations show that even in 2 nm SWCNTs the threshold energies for out-of-plane dynamics are different than in graphene, and depend on the orientation of the silicon-carbon bond with respect to the electron beam as well as the local bonding of the displaced carbon atom and its neighbors.Atomic-level engineering of SWCNTs where the electron wave functions are more strictly confined than in two-dimensional materials may enable the fabrication of tunable electronic resonators and other devices. 1 arXiv:1902.03972v1 [cond-mat.mtrl-sci]

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“…This development builds upon recent work for e-beam applications for direct atomic fabrication. [18][19][20][21][22][23][24]…”

Section: Introductionmentioning

confidence: 99%

Direct matter disassembly via electron beam control: electron-beam-mediated catalytic etching of graphene by nanoparticles

et al. 2020

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Building Structures Atom by Atom via Electron Beam Manipulation

Cited by 95 publications

References 70 publications

Atomic Mechanisms for the Si Atom Dynamics in Graphene: Chemical Transformations at the Edge and in the Bulk

Atomic Mechanisms for the Si Atom Dynamics in Graphene: Chemical Transformations at the Edge and in the Bulk

Electron‐Beam Manipulation of Silicon Impurities in Single‐Walled Carbon Nanotubes

Direct matter disassembly via electron beam control: electron-beam-mediated catalytic etching of graphene by nanoparticles

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