into the ITO electrode. [5][6][7][8] One of the promising ETLs is a class of materials known as solution-based metal oxide systems, such as titanium sub-oxide (TiO x ) and zinc oxide (ZnO). Because such metal oxides have specifi c energy levels to only transfer electrons, their operation as ETLs is compatible with their excellent electron-transporting and hole-blocking characteristics. [ 2,3,9,10 ] Numerous synthetic processes have been developed for those metal oxide systems. In particular, sol-gel synthesis of those metal oxide systems has received intense attention because of its simple solution process for uniform fi lm formation at room temperature (RT). When sol-gel processed TiO x (or ZnO) is coated between ITO and the BHJ layer, the layer acts as an ETL in i-PSCs by aligning energy levels and selecting only electron transport. However, because of the low carrier density or the many trap sites in the semiconducting metal oxide, a Schottky barrier develops at the high WF-metal/metal-oxide interface or energy level mismatching at the metal oxide/BHJ layer interface becomes a recurring issue. [9][10][11][12][13][14][15] Those problems hinder the electron transport between the BHJ layer and ITO and result in the extremely low device performance in i-PSCs, as shown in Figure 1 a. [9][10][11][12]14,15 ] Although photo-excitation of the metal oxides by UV-irradiation increases the carrier density in the metal oxides and recovers the device performance by narrowing and lowering the depletion barrier, as in Figure 1 b, through a so-called a "lightsoaking process," such a photoreduction process takes several minutes and the absence of UV light irradiation (for example, UV protection coating etc.) would be critical for practical applications. [9][10][11][12][13][14][15] Although many researchers have tried to fi nd a fundamental solution to remove the light-soaking process of the metal oxides in the i-PSCs, there has been no successful approach that is directly applicable to printable photovoltaics.The light-soaking process in i-PSCs with the TiO x ETL implies that the increased carrier density in TiO x by chemical doping can be a fundamental solution for this problem. In general, doping the titanium oxide system precedes the reduction process, for example nitrogen (N) doping of titanium dioxide (TiO 2 ). When titanium-oxygen (Ti-O) bonds are replaced with the titanium-nitrogen (Ti-N) bonds, it is well known that the carrier density of TiO 2-δ N δ substantially increases. [16][17][18][19] However, because the formation of the Ti-O bonds is a predominant process in the typical sol-gel method, it has been impossible to control the doping process in the sol-gel fabrication of the metal oxide systems. [ 18,[20][21][22] Such a diffi culty in the doping process often requires additional purifi cations of the sol-gel processed metal oxides, for example, washing or heating processes. [ 18,[21][22][23] Bulk heterojunction (BHJ) polymer solar cells (PSCs) continue to be a promising approach for low-cost energy harvesting becau...