Lightweight, flexible, and electrically conductive thin films with high electromagnetic interference (EMI) shielding effectiveness are highly desirable for next-generation portable and wearable electronic devices. Here, spin spray layer-by-layer (SSLbL) to rapidly assemble Ti 3 C 2 T x MXene-carbon nanotube (CNT) composite films is shown and their potential for EMI shielding is demonstrated. The SSLbL technique allows strategic combinations of nanostructured materials and polymers providing a rich platform for developing hierarchical architectures with desirable cross-functionalities including controllable transparency, thickness, and conductivity, as well as high stability and flexibility. These semi-transparent LbL MXene-CNT composite films show high conductivities up to 130 S cm −1 and high specific shielding effectiveness up to 58 187 dB cm 2 g −1 , which is attributed to both the excellent electrical conductivity of the conductive fillers (i.e., MXene and CNT) and the enhanced absorption with the LbL architecture of the films. Remarkably, these values are among the highest reported values for flexible and semi-transparent composite thin films. This work could offer new solutions for next-generation EMI shielding challenges.

Corrosive ionic defects in perovskite films degrade perovskite solar cells (PSCs) and long-term stable PSCs are realized by neutralizing the defects.

We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.

No abstract

"Top-Down" nanophase reconstruction via a post-additive soaking process is first presented with various BHJ binary composites. By simply rinsing as-cast BHJ films with a solvent mixture containing a few traces of a nanophase-control reagent such as 1,8-diiodooctane, oversized fullerene-rich clusters (>100 nm in dia-meter) in the BHJ film are instataneously disassembled and entirely reorganized into finely intermixed donor/acceptor nanophases (ca. 10 nm) with a 3D compositional homogeneity, without surface segregation.

No abstract

Recently, two-dimensional (2D) organic-inorganic perovskites emerged as an alternative material for their three-dimensional (3D) counterparts in photovoltaic applications with improved moisture resistance. Here, we report a stable, high-gain phototransistor consisting of a monolayer graphene on hexagonal boron nitride (hBN) covered by a 2D multiphase perovskite heterostructure, which was realized using a newly developed two-step ligand exchange method. In this phototransistor, the multiple phases with varying bandgap in 2D perovskite thin films are aligned for the efficient electron-hole pair separation, leading to a high responsivity of ∼10 A W at 532 nm. Moreover, the designed phase alignment method aggregates more hydrophobic butylammonium cations close to the upper surface of the 2D perovskite thin film, preventing the permeation of moisture and enhancing the device stability dramatically. In addition, faster photoresponse and smaller 1/f noise observed in the 2D perovskite phototransistors indicate a smaller density of deep hole traps in the 2D perovskite thin film compared with their 3D counterparts. These desirable properties not only improve the performance of the phototransistor, but also provide a new direction for the future enhancement of the efficiency of 2D perovskite photovoltaics.

Despite being the most commonly used hole transport layer for p-i-n perovskite solar cells, the conventional PEDOT:PSS layer is far from being optimal for the best photovoltaic performance. Herein, we demonstrate highly conductive thin DMSO-doped PEDOT:PSS layers which significantly enhance the light harvesting, charge extraction, and photocurrent production of organo-lead iodide devices. Both imaging and X-ray analysis reveal that the perovskite thin films grown on DMSO-doped PEDOT:PSS exhibit larger grains with increased crystallinity. Altogether, these improvements result in a 37% boost in the power conversion efficiency (PCE) compared to standard p-i-n photovoltaics with pristine PEDOT:PSS. Furthermore, we demonstrate that DMSO-doped PEDOT:PSS devices possess enhanced PCE durability over time which we attribute primarily to fill factor stability.