Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors

Kuzmı́k, J.; Vitanov, S.; Dua, C.; Carlin, J.-F.; Ostermaier, Clemens; Alexewicz, A.; Strasser, G.; Pogány, D.; Gornik, E.; Delage, S.; Palankovski, V.

doi:10.7567/jjap.51.054102

Cited by 13 publications

(2 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3 can be reminiscent of the typical g m (V GS ) characteristics measured for AlInN/GaN based double channel high electron mobility transistors. 15,16 However, we think that the first g m peak is ascribed to a GaN channel of AlInN/GaN HEMTs and the second g m peak clearly pronounced, which appears 4 months and 1 year after the end of the on-state stress, corresponds to the creation of a parasitic channel induced by the ageing test. As the drainto-source voltage is high and that the AlInN/GaN HEMT channel is fully open during the on-state stress, a high density of hot electrons is generated in the region between the drain and the source contacts and these hot carriers can cause severe degradation in the GaN channel.…”

mentioning

confidence: 92%

Parasitic channel induced by an on-state stress in AlInN/GaN HEMTs

Petitdidier

Guhel

Trolet³

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

In this paper, we have highlighted that an on-state stress can induce a parasitic channel in AlInN/GaN HEMTs. The devices have been stressed during 216 h with a drain-to-source voltage (VDS) of 20 V and a gate-to-source voltage (VGS) of 0 V. A decrease in the drain current (IDS max) of 43%, an increase in the access resistance (RON) of 100%, and a drop in the maximum extrinsic transconductance (gm max) from 234 mS/mm down to 144 mS/mm have been observed after the ageing test. Moreover, a double peak feature is shown in the gm (VGS) characteristic 4 months after the end of the on-state stress. Consequently, we can conclude that a parasitic channel has been created by the on-state stress in the AlInN/GaN transistors. At the same time, no degradation of the Schottky contact has been highlighted after the ageing test.

show abstract

mentioning

confidence: 92%

Parasitic channel induced by an on-state stress in AlInN/GaN HEMTs

Petitdidier

Guhel

Trolet³

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…The highest mean electron-temperature in the AlGaN/GaN HEMT in experiments has been estimated at 5000 K with a gate length less than 1 μm [3]. On the other hand, a theoretical calculation by full-band Monte Carlo and hydrodynamic simulations predicted that the mean electron-temperature in the GaN channel achieved 10 000 K (a kinetic energy of 1 eV in reports) under a high electric field of 300 kV cm −1 [16][17][18][19]. The mean electron-temperature experimentally obtained achieved only half of the prediction in the simulation.…”

Section: Introductionmentioning

confidence: 99%

Observation of 8600 K electron temperature in AlGaN/GaN high electron mobility transistors on Si substrate

Narita¹,

Fujimoto²,

Wakejima³

et al. 2016

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The electron temperature (T e ) in AlGaN/GaN high electron mobility transistors (HEMTs) on Si was studied by spectroscopic measurements of its electroluminescence (EL). The EL spectrum has been followed by the Maxwell-Boltzmann distribution and no signal at equivalent energy as a band-gap of GaN has been observed. These experimental results imply that the EL is dominated by an intra-band transition. The highest T e of 8600 K in AlGaN/GaN HEMTs was extracted at the drain voltage of 60 V. The experimental results are in agreement with results previously predicted by a Monte Carlo simulation.

show abstract