An application for a transparent gate electrode with surface-side electroluminescence (EL) observation is proposed for identification of the gate leakage path in AlGaN/GaN high electron mobility transistors. This technique enables surface-side EL observation throughout the gate electrode, so that the substrate material is unrestricted. Through the transparent gate, a non-uniformly located spot-shape EL was clearly observed. By comparing devices with different leakage currents using EL intensity, the location marked by the spot-shape EL is found and demonstrates a dominant leakage path.
AlGaN/GaN high electron mobility transistors with a transparent gate electrode are studied by means of electroluminescence (EL) to investigate under the gate region. We successfully observed EL emissions under the gate at off-state conditions and the gate edge at on-state conditions. We believe the EL through the transparent gate electrode is contributed to gate leakage path. Hence, this transparent gate technology is useful for future evaluation of localized gate leakage paths.
The electron temperature (T e ) in AlGaN/GaN high electron mobility transistors (HEMTs) on Si was studied by spectroscopic measurements of its electroluminescence (EL). The EL spectrum has been followed by the Maxwell-Boltzmann distribution and no signal at equivalent energy as a band-gap of GaN has been observed. These experimental results imply that the EL is dominated by an intra-band transition. The highest T e of 8600 K in AlGaN/GaN HEMTs was extracted at the drain voltage of 60 V. The experimental results are in agreement with results previously predicted by a Monte Carlo simulation.
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