Buffer layers for high-T c thin films on sapphire

Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Piqué, Alberto; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

doi:10.1007/bf00618135

Cited by 39 publications

(17 citation statements)

References 16 publications

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“…Due to sapphire having a different lattice parameter from that of CeO 2 , some defects appear: mainly dislocations at the interface [3]. It was also discovered that CeO 2 layers may have some tetragonal distortion and, in the case of thin (∼40 unit cell) films, cracks may appear due to mechanical stress relaxation [4].…”

Section: Introductionmentioning

confidence: 97%

Characterization of Ce O2thin films on a sapphire

Sokolov

Knotko

Putlayev

et al. 1998

Superlattices and Microstructures

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Section: Introductionmentioning

confidence: 97%

Characterization of Ce O2thin films on a sapphire

Sokolov

Knotko

Putlayev

et al. 1998

Superlattices and Microstructures

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“…Ce(tmhd) 4 (tmhdH ¼ 2,2,6,6-tetramethyl-3,5-heptanedione) can serve as the cerium source of doping SrS by atomic layer epitaxy (ALE) [1] or for doping SrS [2,3] and CaGa 2 S 4 via MOCVD methods [4][5][6]. Ce(tmhd) 4 has also found utility as an MOCVD [7,8] and ALE [9] precursor for the deposition of cerium dioxide, a potential buffer layer for the growth of YBa 2 Cu 3 O 7-x high-T c superconducting films [10], among others [11].…”

Section: Introductionmentioning

confidence: 99%

Physical and Structural Characterization of Ce(IV) β-Diketonate Complexes: Evidence for Geometrical Isomers in the Solid-State

Delarosa

Bousman

Welch

et al. 2002

Journal of Coordination Chemistry

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The Ce(IV) -diketonate complexes CeL 4 [where L is txhd (2,2,6-trimethyl-3,5-heptanedionate) 1; tmod (2,2,7-trimethyl-3,5-octanedionate) 2; tmhd (2,2,6,6-tetramethyl-3,5-heptanedionate) 3] were prepared by the interaction of the sodium salt of the diketonate with cerium(III) nitrate hexahydrate in aqueous ethanol solution. Differential scanning calorimetry and thermogravimetric analysis showed that 1 has a significantly lower sublimation temperature, but higher decomposition temperature than 3. The solid-state structures of the three complexes were determined via single crystal x-ray diffraction methods. Complex 2, which does not sublime, had significantly closer intermolecular contacts than those found for 1 and 3.

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“…YBa2Cu30x thin films have been grown on cerium oxide CeOz buffer layers on both sapphire and Si substrates by vacuum evaporation [I], laser ablation [2] and sputtering [3]. Several phases of Ce02, Ce203 and oxygen deficient CeO, with 1.5 < y < 2.0 [4,5] of bulk cerium oxide are known.…”

Section: Introductionmentioning

confidence: 99%

Resonant Rutherford backscattering studies of cerium oxide thin films deposited by RF sputtering

Chin

Lin

et al. 1997

IEEE Trans. Appl. Supercond.

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Abstract-We have studied the stoichiometry of cerium oxide films deposited by RF sputtering on sapphire and MgO as a function of deposition conditions using the resonant Rutherford backscaittering method. We found that some films have the off-stoichiometry of CeO, with y greater than 2.0. Such an off-stoichiometry cannot be due to a mixture of the known phases of bulk cerium oxide samples. This may be due to either cerium vacancies or interstitial oxygen atomic impurities. The cerium ion x-ray photoemission spectra of those films cannot determine the vaaancy of the cerium ions. The c-axis YBaCuO thin flims deposited by sputtering on the CeOJ.3 buffer layer on saphhire was found to be epitaxial. The T, was 86 K with A T, less than 1 K.

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Buffer layers for high-T c thin films on sapphire

Cited by 39 publications

References 16 publications

Characterization of Ce O2thin films on a sapphire

Characterization of Ce O2thin films on a sapphire

Physical and Structural Characterization of Ce(IV) β-Diketonate Complexes: Evidence for Geometrical Isomers in the Solid-State

Resonant Rutherford backscattering studies of cerium oxide thin films deposited by RF sputtering

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