Resonant Rutherford backscattering studies of cerium oxide thin films deposited by RF sputtering

Abstract

Abstract-We have studied the stoichiometry of cerium oxide films deposited by RF sputtering on sapphire and MgO as a function of deposition conditions using the resonant Rutherford backscaittering method. We found that some films have the off-stoichiometry of CeO, with y greater than 2.0. Such an off-stoichiometry cannot be due to a mixture of the known phases of bulk cerium oxide samples. This may be due to either cerium vacancies or interstitial oxygen atomic impurities. The cerium ion x-ray photoemission spectra of those films cannot determine the vaaancy of the cerium ions. The c-axis YBaCuO thin flims deposited by sputtering on the CeOJ.3 buffer layer on saphhire was found to be epitaxial. The T, was 86 K with A T, less than 1 K.

Structural, morphological and electrical properties of spray deposited nano-crystalline CeO2 thin films

“…There are different methods to synthesize the CeO 2 thin films such as, sputtering [14], laser ablation [15], chemical vapor deposition [16], sol-gel deposition [17], microwave induced combustion [18], anodic electrodeposition [19], spray pyrolysis [20][21][22][23][24][25][26].…”

Anodic Electrodeposition of Cerium Oxide Thin Films

“…It has been used as a corrosion inhibitor for metals such as aluminum and stainless steel. [9][10][11] A long list of processing techniques has been employed to produce cerium oxide films such as sputtering, 12,13 laser ablation, 5,8,14 chemical vapor deposition, 15 sol-gel deposition, 16,17 and pulsed laser deposition. 15 CeO 2 deposition onto a variety of important substrates has been studied for silicon and electrochromic devices.…”

“…15 CeO 2 deposition onto a variety of important substrates has been studied for silicon and electrochromic devices. 13,17 Ultrathin cerium oxide films have been grown on Pt͑111͒, 6 Pd͑111͒, 7 Ru͑0001͒, and Ni͑111͒ 19 by dosing Ce in an oxygen ambient chamber. Such films were highly ordered with an orientation determined by the substrate orientation.…”

Preparation of YBCO films on sapphire with CeO/sub 2/ deposited by ion beam sputtering

“…Instead of the reported methods, electron beam evaporation [l], laser ablation [3][4] [6] and rf sputtering[2] [7][8], we used a high oxygen pressure ion beam deposition for CeO, film. This method had been developed by some of the authors and used successfully to form SrTiO, films for tunnel junctions [9] and field effect transistors [lO].…”