Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition

Jeong, Jae Kyeong; Choi, Jung‐Hae; Kim, Hyun Jin; Seo, Hosung; Kim, Hee Jin; Yoon, Euijoon; Hwang, Cheol Seong; Kim, Hyeong Joon

doi:10.1016/j.jcrysgro.2004.12.002

Cited by 17 publications

(3 citation statements)

References 27 publications

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“…In spite of the interesting thermal, optical and electrical performance of this material, devices produced from GaN suffer from numerous threading dislocations, due to the lack of an appropriate substrate. For instance the heteroepitaxy of GaN on sapphire (α-Al 2 O 3 ) has a mismatch as high as 16% [7]. The introduction of epitaxial lateral overgrowth (ELOG) [8] and pendeoepitaxy techniques [9] for the deposition of GaN thin films has partially alleviated the problems of threading dislocations.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates

Lucas¹,

Mitra²,

McNally³

et al. 2007

J. Phys. D: Appl. Phys.

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CuCl is a I-VII semiconductor material with a direct band gap of ∼3.4 eV. It exhibits a zincblende structure (γ -phase) at low temperatures, up to ∼680 K. Unlike GaN, ZnO and related materials, CuCl has a relatively low lattice mismatch with Si (<0.4%) and a large excitonic binding energy (∼190 meV). This suggests the possibility of the fabrication of excitonic-based blue/UV optoelectronic devices on Si with relatively low threading dislocation densities. In this study, CuCl has been deposited and examined as a candidate material for the fabrication of these devices. X-ray diffraction (XRD) measurements confirmed that the deposited films were preferentially oriented in the (1 1 1) plane. Room temperature photoluminescence measurements reveal a strong Z 3 free exciton peak (3.232 eV). Both steady state dc and ac impedance spectroscopy experiments suggested that the deposited CuCl is a mixed ionic-electronic semiconductor material. An electronic conductivity of the order of 2.3 × 10 −7 S cm −1 was deduced to be in coexistence with Cu + ionic conductivity using irreversible electrodes (Au), while a total conductivity of the order of 6.5 × 10 −7 S cm −1 was obtained using reversible electrodes (Cu) at room temperature. Further to this, we have identified some of the challenges in fabricating an optoelectronic device based on a CuCl/Si hybrid platform and propose some possible solutions.

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Section: Introductionmentioning

confidence: 99%

Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates

Lucas¹,

Mitra²,

McNally³

et al. 2007

J. Phys. D: Appl. Phys.

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“…Thus, optimizing the quality of the GaN/AlN and AlN/SiC interfaces, as well as the microstructure of the AlN film, becomes crucial to increasing TBC , while maintaining the high crystalline quality of GaN. Meanwhile, efforts have been made to remove the nucleation layer while preserving the high quality of the GaN layer using various pretreatment and growth techniques. ,, Mu et al employed a bonding method to directly bond high-quality GaN to SiC, achieving a high TBC interface of ∼230 MW m –2 K –1 . However, a direct comparison of TBCs for GaN/SiC interfaces with and without the AlN layer under identical growth conditions remains unexplored.…”

Section: Introductionmentioning

confidence: 99%

“…Meanwhile, efforts have been made to remove the nucleation layer while preserving the high quality of the GaN layer using various pretreatment and growth techniques. 15,19,20 Mu et al 15 employed a bonding method to directly bond high-quality GaN to SiC, achieving a high TBC interface of ∼230 MW m −2 K −1 . However, a direct comparison of TBCs for GaN/SiC interfaces with and without the AlN layer under identical growth conditions remains unexplored.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers

Li,

Hussain,

Liao

et al. 2024

ACS Appl. Mater. Interfaces

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Heat dissipation plays a crucial role in the performance and reliability of high-power GaN-based electronics. While AlN transition layers are commonly employed in the heteroepitaxial growth of GaN-on-SiC substrates, concerns have been raised about their impact on thermal transport across GaN/ SiC interfaces. In this study, we present experimental measurements of the thermal boundary conductance (TBC) across GaN/ SiC interfaces with varying thicknesses of the AlN transition layer (ranging from 0 to 73 nm) at different temperatures. Our findings reveal that the addition of an AlN transition layer leads to a notable increase in the TBC of the GaN/SiC interface, particularly at elevated temperatures. Structural characterization techniques are employed to understand the influence of the AlN transition layer on the crystalline quality of the GaN layer and its potential effects on interfacial thermal transport. To gain further insights into the trend of TBC, we conduct molecular dynamics simulations using high-fidelity deep learning-based interatomic potentials, which reproduce the experimentally observed enhancement in TBC even for atomically perfect interfaces. These results suggest that the enhanced TBC facilitated by the AlN intermediate layer could result from a combination of improved crystalline quality at the interface and the "phonon bridge" effect provided by AlN that enhances the overlap between the vibrational spectra of GaN and SiC.

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Growth of Bulk GaN from Gas Phase

Siche

Zwierz

2018

Crystal Research and Technology

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The present status of the GaN bulk growth by vapor growth methods is reviewed and is shortly classified into all methods with bulk growth potential. The hydride vapor phase epitaxy (HVPE) as the most developed and already commercialized method using chlorine as transport agent was frequently reviewed before. However, it does not yield true bulk GaN, suffers from perfection limiting heteroepitaxy, direction depending growth rate, parasitic growth and by‐product formation, the latter both limiting the process duration. Therefore, in this review other methods are considered. Alternative transport agents are pronounced, like iodine, hydrogen, oxygen, water and the pseudo halide CN− ‐ ion, which are not able to reveal potential for bulk growth. These mostly less successful approaches, are sometimes repeated, because not adequately published.

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Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition

Cited by 17 publications

References 27 publications

Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates

Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates

Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers

Growth of Bulk GaN from Gas Phase

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