1972
DOI: 10.1109/t-ed.1972.17381
|View full text |Cite
|
Sign up to set email alerts
|

Buckling of thermally-grown SiO2thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
13
0

Year Published

1976
1976
2023
2023

Publication Types

Select...
3
3
2

Relationship

0
8

Authors

Journals

citations
Cited by 22 publications
(13 citation statements)
references
References 1 publication
0
13
0
Order By: Relevance
“…This can be easily confirmed by substituting these relationships into the governing equation (5). Therefore, these relationships are just the approximations of the real angle-position relationship.…”
Section: Discussion Of Resultsmentioning
confidence: 67%
See 1 more Smart Citation
“…This can be easily confirmed by substituting these relationships into the governing equation (5). Therefore, these relationships are just the approximations of the real angle-position relationship.…”
Section: Discussion Of Resultsmentioning
confidence: 67%
“…Arrays of clamped-clamped (i.e., doubly-clamped) microbeams of different lengths have been used to determine residual stresses in polysilicon films [1][2][3] and thermal SiO 2 4,5 . Since fabrication processes that microbeams experience are similar to those for thin films, the microbeams should have residual stress as well.…”
Section: Introductionmentioning
confidence: 99%
“…BOX layer has built-in compressive stresses that originate during the high-temperature growth process, due to the difference in thermal expansion coefficient between Si and SiO 2 [13]. Releasing such a compressively-stressed beam will partially relief the stresses by beam elongation, as shown in Fig.…”
Section: Tensile Strain By Free-standing Sio 2 Beamsmentioning
confidence: 99%
“…Releasing such a compressively-stressed beam will partially relief the stresses by beam elongation, as shown in Fig. 5 (a) and (b), while residual stresses work on deflecting the beam [13], [14]. Consequently, upward bending, for example, will cause the upper side of the beam to be tensile-strained, while the bottom side gets compressed [14], as shown in Fig.…”
Section: Tensile Strain By Free-standing Sio 2 Beamsmentioning
confidence: 99%
“…This results in a biaxial compressive stress being applied to the SiO 2 layer (Fig 1). It is this compressive stress which causes the membrane to buckle out of plane [3], [4].…”
Section: Introductionmentioning
confidence: 99%