“…where µ o is the zero bias mobility, C ox is the gate oxide capacitance per unit area, kT/q is the thermal voltage, V TH0 is the zero bias threshold voltage, γ' is the linearized body effect coefficient, and η is the DIBL (Drain-induced barrier lowering) effect coefficient [1,13]. Clearly, the leakage current increases exponentially as the threshold voltage is reduced.…”