Brush cleaning effect on tugnsten voids defect in chemical mechanical polishing: CFM: Contamination free manufacturing

Kim, Hee Jin; Egan, Bryan; Solan, Robert; Shi, Xiaoyang; Han, Ja-Hyung

doi:10.1109/asmc.2018.8373140

Cited by 3 publications

(1 citation statement)

References 5 publications

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“…Because of adsorption characteristics of this agent on the films, the blanket removal rates on SiO 2 and W films displayed non-Prestonian behavior at a low threshold pressure. Kim et al (2018aKim et al ( , 2018b proposed the mechanism of tungsten void formation during CMP. The defects were caused by the oxidation and friction force in the brush cleaner module.…”

Section: Chemical Mechanical Polishing For Semiconductor Devicesmentioning

confidence: 99%

Recent advances and applications of abrasive processes for microelectronics fabrications

Zhong

2019

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Purpose This paper aims to review recent advances and applications of abrasive processes for microelectronics fabrications. Design/methodology/approach More than 80 patents and journal and conference articles published recently are reviewed. The topics covered are chemical mechanical polishing (CMP) for semiconductor devices, key/additional process conditions for CMP, and polishing and grinding for microelectronics fabrications and fan-out wafer level packages (FOWLPs). Findings Many reviewed articles reported advanced CMP for semiconductor device fabrications and innovative research studies on CMP slurry and abrasives. The surface finish, sub-surface damage and the strength of wafers are important issues. The defects on wafer surfaces induced by grinding/polishing would affect the stability of diced ultra-thin chips. Fracture strengths of wafers are dependent on the damage structure induced during dicing or grinding. Different thinning processes can reduce or enhance the fracture strength of wafers. In the FOWLP technology, grinding or CMP is conducted at several key steps. Challenges come from back-grinding and the wafer warpage. As the Si chips of the over-molded FOWLPs are very thin, wafer grinding becomes critical. The strength of the FOWLPs is significantly affected by grinding. Originality/value This paper attempts to provide an introduction to recent developments and the trends in abrasive processes for microelectronics manufacturing. With the references provided, readers may explore more deeply by reading the original articles. Original suggestions for future research work are also provided.

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Section: Chemical Mechanical Polishing For Semiconductor Devicesmentioning

confidence: 99%

Recent advances and applications of abrasive processes for microelectronics fabrications

Zhong

2019

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A New Approach to the Formation Mechanism of Tungsten Void Defect in Chemical Mechanical Polishing

Kim¹,

Egan²,

Shi³

et al. 2018

ECS J. Solid State Sci. Technol.

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The advanced node semiconductor device fabrication needs tungsten chemical mechanical polishing as a critical process to enable transistor formation as well as metal interconnection. Accordingly, CMP induced defect concerns have drawn attention to the process integration. Tungsten voids by CMP are one of the major defects to detract device yield. Their formation mechanism has been known as electrochemical corrosion or an optical induced corrosion phenomenon associated with polishing slurry chemistry. However, this paper proposes a new mechanism of tungsten void formation. Different from known corrosion mechanisms, it is observed that tungsten void frequency has strong correlation with CMP in-situ cleaner brush lifetime. At early brush life, tungsten void forms more frequently. Moreover, this paper reveals that CMP brush cleaning play a critical role in the formation of tungsten voids. Tungsten etch rate dependence on brush condition, tungsten void defect density correlation to brush life, and surface chemical analysis of tungsten blanket wafers show that tungsten voids are induced by combined effect of friction force and oxidation in brush cleaner module, which is a new approach to the formation mechanism of tungsten void defect.

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Recent Developments in Chemical Mechanical Polishing (CMP) for Precision Manufacturing

Kulkarni

Gupta

2022

IJARSCT

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Advanced developments and applications of Chemical Mechanical Planarization/Polishing (CMP) did by researchers in current decade were discussed in this article. Topics on which this article forms the basis are Abrasives and slurry developments, environment and safety conditions, manufacturing process improvements, modelling and simulations methods for CMP, optimization approaches, reduction of defects in CMP, aid of other manufacturing processes to improve manufacturing performance of CMP. This article expresses several approaches, methods etc. used by various researchers in past ten years from articles published by reputed publishers (IEEE, SPRINGER, ELSEVIER, SEMANTIC SCHOLAR etc.).

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Brush cleaning effect on tugnsten voids defect in chemical mechanical polishing: CFM: Contamination free manufacturing

Cited by 3 publications

References 5 publications

Recent advances and applications of abrasive processes for microelectronics fabrications

Recent advances and applications of abrasive processes for microelectronics fabrications

A New Approach to the Formation Mechanism of Tungsten Void Defect in Chemical Mechanical Polishing

Recent Developments in Chemical Mechanical Polishing (CMP) for Precision Manufacturing

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