Broken-gap heterojunction in the p-GaSb-n-InAs1−x Sbx(0≤x≤0.18) system

Kizhaev, S. S.; Molchanov, S. S.; Zotova, N. V.; Grebenshchikova, E. A.; Yakovlev, Yu. P.; Hulicius, E.; Šimeček, T.; Melichar, K.; Pangrác, J.

doi:10.1134/1.1424407

Cited by 12 publications

(6 citation statements)

References 3 publications

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“…Several detector schemes have been investigated including homojunctions, p-n diodes on GaSb substrates and various heterojunctions, designed to reduce the thermal diffusion current, as well as more exotic approaches like an InAsSb absorber as the gate of a GaAs field effect transistor or in an upconversion device. 7,8 It is important to understand the electrical properties of this interface as it appears as a parasitic junction in InAsSb devices grown on GaSb. For example, Srivastava et al 5 have shown that rectification with a large barrier at 292 K can be obtained for n-type InAsSb on n-type GaSb.…”

Section: Introductionmentioning

confidence: 99%

Electrical and optical characterization of n-InAsSb/n-GaSb heterojunctions

David

Martine

Cherng

et al. 2010

Journal of Applied Physics

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Articles you may be interested inDual-wavelength sensitive AlGaN/GaN metal-insulator-semiconductor-insulator-metal ultraviolet sensor with balanced ultraviolet/visible rejection ratiosWe report the electrical properties of n-InAsSb/n-GaSb heterojunctions as a function of the GaSb doping concentration. Because of the staggered type II band alignment, strong electron accumulation occurs on the InAsSb side. For low GaSb doping, depletion occurs on the GaSb side resulting in a Schottky-like junction as previously reported. As the GaSb doping increases, the built-in voltage as well as depletion width decreases as shown using self-consistent simulations. For GaSb doping levels above 5 ϫ 10 17 cm −3 , the junction loses its rectifying properties due to tunneling. Under zero and reverse bias voltage, the photoresponse of these diodes is solely due to the photovoltaic effect in the GaSb depletion region. For forward bias voltages Ͼ400 mV, we also observed a photoconductive response from the InAsSb layer. The proposed physical mechanism is quite different from the one suggested in a recent paper.

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Section: Introductionmentioning

confidence: 99%

Electrical and optical characterization of n-InAsSb/n-GaSb heterojunctions

David

Martine

Cherng

et al. 2010

Journal of Applied Physics

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“…Figure 3 shows some typical UV-vis-IR optoelectronic materials and the band structures calculated by first-principles. [110][111][112][113][114][115][116][117][118][119][120][121][122][123][124] In this part, we will discuss the NWs based optoelectronic synaptic devices in different spectral range, and facilitate the future applications of NWs optoelectronic synapses.…”

Section: Uv-vis-ir Optoelectronic Synaptic Devicesmentioning

confidence: 99%

Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

Chen

Jiang

et al. 2022

Adv Funct Materials

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Simulating biological synaptic functionalities through artificial synaptic devices opens up an innovative way to overcome the von Neumann bottleneck at the device level. Artificial optoelectronic synapses provide a non‐contact method to operate the devices and overcome the shortcomings of electrical synaptic devices. With the advantages of high photoelectric conversion efficiency, adjustable light absorption coefficient, and broad spectral range, nanowires (NWs)‐based optoelectronic synapses have attracted wide attention. Herein, to better promote the applications of nanowires‐based optoelectronic synapses for future neuromorphic systems, the functionalities of optoelectronic synaptic devices and the current progress of NWs optoelectronic synaptic devices in UV–vis–IR spectral range are introduced. Furthermore, a bridge between NWs‐based optoelectronic synaptic device and the neuromorphic system is established. Challenges for the forthcoming development of NWs optoelectronic synapses are also discussed. This review may offer a vision into the design and neuromorphic applications of NWs‐based optoelectronic synaptic devices.

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“…A broken type of band lineup is accepted for the InAs 0.91 Sb 0.09 /GaSb heterostructure [35][36][37]. A broken type of band lineup is accepted for the InAs 0.91 Sb 0.09 /GaSb heterostructure [35][36][37].…”

Section: (H) Inassb/gasbmentioning

confidence: 99%

Heterojunction Band Offsets and Schottky Barrier Height

Adachi

2009

Properties of Semiconductor Alloys

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One of the most important parameters for the design and analysis of heterojunction and QW electronic and optoelectronic devices is the heterojunction band offset. The band offset is a consequence of the difference between the band-gap energies of two semiconductors. As shown in Figure 9.1, the energy difference is distributed between a CB offset DE c and a VB offset DE v . In a type I (straddling lineup), we obtainwhile for type II (broken-gap and staggered lineups) the relationship is given bywhere DE g ¼ jE g1 À E g2 j is the band-gap energy difference.Since the temperature variations of the band-gap energies are very similar among various semiconductors [1], the band offsets and offset ratio can usually be assumed to be independent of temperature. Group-IV Semiconductor Heterostructure System (a) CSi/SiThe C x Si 1Àx /Si heterostructure shows a biaxial tensile strain in the alloy layer. The biaxial strain or stress in the coherently strained QW layers splits the LH and HH bands so that the LH band is highest in C x Si 1Àx layer. Similarly, for C x Si 1Àx layers with smaller x compositions, the lowest CB is at the X (D) band. Brunner et al.[2] measured near-band-edge emission from pseudomorphic C x Si 1Àx /Si QW structures with x up to $2 at%. They found a linear decrease in the PL emission peak with increasing x, which is about 30% larger than the expected band-gap reduction induced by strain. This might indicate that incorporation of C reduces the intrinsic band-gap energy. The trend for decreasing C x Si 1Àx band-gap energy was also proposed by detailed binding calculations [3].The band-offset values for C x Si 1Àx /Si heterostructure have been determined experimentally by several authors [4,5]. Houghton et al.[4] confirmed a type-I alignment in C x Si 1Àx /Si with x ¼ 0.5 À 1.7 at% and also observed an elastic-strain-induced transition from type I to type II in Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors Sadao AdachiC x Si 1Àx /Si QWs. The band-offset ratio obtained by these authors is DE c : DE v ¼ 65 : 35 with E g (Si) ! E g (C x Si 1Àx ). Williams et al. [5] also obtained a band-offset ratio of about 70 : 30 for x ¼ 0.5 À 1.7 at%. The corresponding band lineup is shown schematically in Figure 9.2(a). An ab initio calculation confirms the offset ratio of 70 : 30 [6]. (b) SiGe/SiPrevious studies on the band alignment of the Si x Ge 1Àx /Si heterostructure suggest type-I [7,8] or type-II behavior [9-12]. By employing a wafer bending technique, Thewalt et al. [11] observed both type-I and type-II behaviors respectively, in PL of an UHV-CVD-grown Si 0.7 Ge 0.3 /Si(100) QW at high and low laser powers. They concluded that a determination of type-I alignment [7,8] is a result of the band-bending effects due to high excitation. More recently, Cheng et al. [12] made PL measurements on UHV-CVD-grown and MBE-grown Si x Ge 1Àx /Si MQWs and concluded that the band alignment was type II with DE c ¼ 0.3DE g and DE v ¼ 1.3DE g , as shown in Figure 9.2(b). (c) CSiGe/Si Patel et al. [18] o...

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Broken-gap heterojunction in the p-GaSb-n-InAs1−x Sbx(0≤x≤0.18) system

Cited by 12 publications

References 3 publications

Electrical and optical characterization of n-InAsSb/n-GaSb heterojunctions

Electrical and optical characterization of n-InAsSb/n-GaSb heterojunctions

Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

Heterojunction Band Offsets and Schottky Barrier Height

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