Broadly tunable compact continuous-wave Cr^2+:ZnS laser

Sorokina, Irina T.; Sorokin, Evgeni; Mirov, Sergey; Fedorov, Vladimir V.; Badikov, V. V.; Panyutin, Vladimir; Schaffers, Kathleen I.

doi:10.1364/ol.27.001040

Cited by 107 publications

(53 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…For Cr:ZnS, when Cr substitutes for Zn, crystal field splitting gives broad absorption and emission bands suitable for broadband mid-IR lasers [15]. Films with high concentrations of Cr show significant absorption associated with the inclusion of the transition metal within the ZnS host.…”

Section: Optical Absorptionmentioning

confidence: 99%

Vapor deposited Cr-doped ZnS thin films: towards optically pumped mid-infrared waveguide lasers

Karhu

Ildstad

Poggio

et al. 2016

Opt. Mater. Express

Self Cite

View full text Add to dashboard Cite

Compact, affordable mid-IR lasers require the development of gain materials in waveguide form. We report on the high vacuum deposition of Cr:ZnS films with concentration ranging from 10 18 -10 20 dopants/cm 3 . At low concentrations, films display wellisolated absorption associated with substitutional Cr 2+ ions in the lattice. Spatial modulation of the dopant concentration suppresses the absorption associated with this substitution. Lateral crystallite sizes less than 30 nm are associated with the lowest substrate temperatures (<50 °C) used during deposition, and waveguide losses as low as 8dB/cm are observed. These materials are promising candidates as gain media for fabrication of waveguide mid-IR lasers. 4406-4414 (2015). 19. R. Swanepoel, "Determination of the Thickness and Optical-Constants of Amorphous-Silicon," J. Phys. E Sci.Instrum. 16(12), 1214-1222 (1983). 20. D. Minkov and R. Swanepoel, "Computerization of the Optical Characterization of a Thin Dielectric Film," Opt.Eng. 32(12), 3333-3337 (1993). 21. S. B. Mirov, V. V. Fedorov, K. Graham, I. S. Moskalev, I. T. Sorokina, E. Sorokin, V. Gapontsev, D. Gapontsev, V. V. Badikov, and V. Panyutin, "Diode and fibre pumped Cr 2+ :ZnS mid-infrared external cavity and microchip lasers," IEEE Proc. -Optoelectron. 150, 340-345 (2003).

show abstract

Section: Optical Absorptionmentioning

confidence: 99%

Vapor deposited Cr-doped ZnS thin films: towards optically pumped mid-infrared waveguide lasers

Karhu

Ildstad

Poggio

et al. 2016

Opt. Mater. Express

Self Cite

View full text Add to dashboard Cite

show abstract

“…[13] and the diode-pumped version of it in Ref. [14]. The main reason of underinvestigation of the single crystal Cr:ZnS is the lack of its commercial availability.…”

mentioning

confidence: 99%

“…The formally cubic Cr:ZnS modification is a polytypical compound and can co-exist in several structure types, thus exhibiting natural birefringence [13]. Nevertheless, subject to a proper orientation, the CW output power of 700 mW at 2.35 m with 700 nm wavelength tuning were demonstrated using Cr:ZnS single crystal as a laser active element [14]. Subsequently, the laser action in microchip configuration [15], picosecond passive mode-locking [16] and finally, femtosecond SESAM-initiated mode-locking was obtained in 2011 with 1.2 nJ 110 fs pulses [17].…”

mentioning

confidence: 99%

Kerr-lens mode-locked Cr:ZnS laser

Tolstik¹,

Sorokin²,

Sorokina³

2013

Opt. Lett.

Self Cite

View full text Add to dashboard Cite

Received Month X, XXXX; revised Month X, XXXX; accepted Month X, XXXX; posted Month X, XXXX (Doc. ID XXXXX); published Month X, XXXX We report the soft-aperture Kerr-lens mode-locked Cr:ZnS laser, generating 550 mW of 69-fs nearly transform-limited pulses at 2.39 µm wavelength. The pulse energy reached 3.8 nJ at 145 MHz repetition rate, limited by the onset of doublepulsing. This corresponds to the shortest-pulse and highest-energy direct femtosecond laser source in the mid-IR. Dispersion compensation was achieved by a single chirped mirror and a thin sapphire plate, making the laser design simple, compact and very stable, operating at ambient air and room temperature. The superb thermal and mechanical properties of Cr:ZnS, exceeding those of Cr:ZnSe and many established femtosecond laser crystals should allow further scaling of output power.

show abstract

“…:ZnS active medium has later been shown to operate in tunable continuous-wave regime [5], as diodepumped [6], microchip [7], high-power [8], and tunable sources with over 1200 nm tuning range [9].…”

Section: +mentioning

confidence: 99%

Femtosecond SESAM-modelocked Cr:ZnS laser

Sorokin¹,

Tolstik²,

Schaffers³

et al. 2012

Opt. Express

Self Cite

View full text Add to dashboard Cite

Abstract:We report self-starting femtosecond operation of a 180-MHz SESAM-controlled prismless Cr:ZnS laser around 2400 nm at open air and room temperature. Dispersion compensation was achieved by a combination of bulk materials and chirped mirrors. Both soliton-and chirped-pulse operation regimes have been demonstrated with 130 fs (630 fs) pulse duration at 130 (205) mW average output power, respectively. The output power was about 30% higher than for a comparable Cr:ZnSe sample in the same cavity.

show abstract

Broadly tunable compact continuous-wave Cr^2+:ZnS laser

Cited by 107 publications

References 10 publications

Vapor deposited Cr-doped ZnS thin films: towards optically pumped mid-infrared waveguide lasers

Vapor deposited Cr-doped ZnS thin films: towards optically pumped mid-infrared waveguide lasers

Kerr-lens mode-locked Cr:ZnS laser

Femtosecond SESAM-modelocked Cr:ZnS laser

Contact Info

Product

Resources

About