Broadly Tunable AlInAsSb Digital Alloys Grown on GaSb

Maddox, Scott J.; March, Stephen D.; Bank, Seth R.

doi:10.1021/acs.cgd.5b01515

Cited by 82 publications

(42 citation statements)

References 28 publications

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“…4a. All the samples are grown by solid-source molecular beam epitaxy (MBE), lattice matched on semi-insulating InP substrates [34]. Alloy #1 is a conventional random alloy, InAs per period), and 107 periods in total.…”

Section: Resultsmentioning

confidence: 99%

Picosecond transient thermoreflectance for thermal conductivity characterization

Jeong

Meng

Rockwell

et al. 2019

Nanoscale and Microscale Thermophysical Engineering

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We developed a picosecond transient thermoreflectance (ps-TTR) system for thermal property characterization, using a low-repetition rate picosecond pulsed laser (1064 nm) as heating source and a 532 nm CW laser as probe. Low-repetition rate pump eliminates the complication from thermal accumulation effect. Without the need of a mechanical delay stage, this ps-TTR system can measure thermal decay curve from 500 ps up to 5 µs. Three groups of samples are tested with this ps-TTR system: bulk crystals (Si, GaAs and sapphire); MoS2 thin films (157 nm ~ 900 nm); InGaAs random alloy and GaAs/InAs digital alloy (short period superlattices). Analysis of the thermoreflectance signals show that this ps-TTR system is able to measure both thermal conductivity and interface conductance. The measured thermal conductivity values in bulk crystals, MoS2 thin films and InGaAs random alloy are all consistent with literature values. Crossplane thermal conductivity in MoS2 thin films do not show obvious thickness dependence, suggesting short phonon mean free path along cross-plane direction. Thermal conductivities of GaAs/InAs digital alloys are smaller than InGaAs random alloy, due to the efficient scattering at interfaces. We also discuss the advantages and disadvantages of this newly developed ps-TTR system comparing with the popular timedomain thermoreflectance (TDTR) system.

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Section: Resultsmentioning

confidence: 99%

Picosecond transient thermoreflectance for thermal conductivity characterization

Jeong

Meng

Rockwell

et al. 2019

Nanoscale and Microscale Thermophysical Engineering

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“…Al x In 1-x As y Sb 1-y epitaxial layers, with Al concentration from x = 0.3-0.7, were grown on ntype Te-doped GaSb (001) substrates by solid-source molecular beam epitaxy (MBE) as digital alloys of the binary semiconductors [10]. Two Al x In 1-x As y Sb 1-y PIN APDs with x = 0.6 and 0.7, and an Al x In 1-x As y Sb 1-y SACM APD were studied.…”

Section: Device Growth and Fabricationmentioning

confidence: 99%

Al_xIn_1-xAs_ySb_1-y photodiodes with low avalanche breakdown temperature dependence

Jones¹,

Yuan²,

Ren³

et al. 2017

Opt. Express

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We report AlInAsSb PIN and Separate Absorption, Charge and Multiplication (SACM) avalanche photodiodes (APDs) with high temperature stability. This work is based on measurements of avalanche breakdown voltage of these devices for temperatures between 223 K and 363 K. Breakdown voltage temperature coefficients are shown to be lower than those of APDs fabricated with other materials with comparable multiplication layer thicknesses.

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“…In order to bypass the wide miscibility gap present in the Al x In 1-x As y Sb 1-y material system, these layers were grown as a digital alloy of the binary alloys AlAs, AlSb, InAs, and InSb, using a digital alloy period of 3 nm and the following layer sequence: AlSb, AlAs, AlSb, InSb, InAs, Sb. 21,22 The bandgap can be tuned by changing the Al concentration, as shown in Fig. 1(a).…”

Section: Crystal Growth and Device Fabricationmentioning

confidence: 99%

Recent progress in avalanche photodiodes for sensing in the IR spectrum

et al. 2016

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We report low-noise avalanche gain from photodiodes composed of a previously uncharacterized alloy, Al x In 1-x As y Sb 1-y , grown lattice-matched on GaSb substrates. By varying the aluminum content the direct bandgap can be tuned from 0.25 eV (0% aluminum) to 1.24 eV (75% aluminum), corresponding to photon wavelengths from 5000 nm to 1000 nm, with the transition from direct-gap to indirect-gap occurring at ~1.18 eV (~72% aluminum), or 1050 nm. This has been used to fabricate separate absorption, charge, and multiplication (SACM) APDs using Al 0.7 In 0.3 As 0.3 Sb 0.7 for the multiplication region and Al 0.4 In 0.6 As 0.3 Sb 0.7 for the absorber. Gain values as high as 100 have been achieved and the excess noise factor is characterized by a k value of 0.01, which is comparable to or below that of Si. In addition, since the bandgap of the absorption region is direct, its absorption depth is 5 to 10 times shorter than indirect-bandgap silicon, potentially enabling significantly higher operating bandwidths.

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Broadly Tunable AlInAsSb Digital Alloys Grown on GaSb

Cited by 82 publications

References 28 publications

Picosecond transient thermoreflectance for thermal conductivity characterization

Picosecond transient thermoreflectance for thermal conductivity characterization

Al_xIn_1-xAs_ySb_1-y photodiodes with low avalanche breakdown temperature dependence

Recent progress in avalanche photodiodes for sensing in the IR spectrum

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