Al_xIn_1-xAs_ySb_1-y photodiodes with low avalanche breakdown temperature dependence

Abstract

We report AlInAsSb PIN and Separate Absorption, Charge and Multiplication (SACM) avalanche photodiodes (APDs) with high temperature stability. This work is based on measurements of avalanche breakdown voltage of these devices for temperatures between 223 K and 363 K. Breakdown voltage temperature coefficients are shown to be lower than those of APDs fabricated with other materials with comparable multiplication layer thicknesses.

A GaAsSb/AlGaAsSb Avalanche Photodiode With a Very Small Temperature Coefficient of Breakdown Voltage

“…Compared to SAM-APDs with similar avalanche region widths (200 nm), our GaAsSb/AlGaAsSb SAM-APD produces a Cbd value that is ~ 10 times and 5 times lower than that of InGaAs/InP and InGaAs/InAlAs SAM-APDs respectively. Our Cbd value is also lower than that for the AlInAsSb grown on GaSb [28]. Therefore, GaAsSb absorption region can be combined with the AlGaAsSb avalanche region to produce SAM-APD with low temperature coefficient of breakdown voltage.…”

“…Fig. 7 Comparison temperature coefficient of breakdown voltage of this work with reported data for other SAM-APDs utilizing InP [19], [24] , InAlAs [19], [25]- [27], AlAsSb [18], and AlInAsSb [28] avalanche region.…”

Evolution of Low-Noise Avalanche Photodetectors

“…Figure 8 shows the breakdown voltage temperature coefficient ΔVbd/ΔT 43 versus multiplication layer thickness for AlxIn1-xAsySb1-y, InP, AlInAs, Si, and Al1-xGaxAsySb1-y. 44 When compared to devices with similar multiplication layer thicknesses, ΔVbd/ΔT of ~3mV/K is less than a quarter that of AlInAs devices and almost an order of magnitude lower than ΔVbd/ΔT for InP and Si devices.…”

Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP

“…Temperature dependence of the impact ionization coefficients in AlAsSb lattice matched to InP [15], [16], no such study exists for AlAsSb. Unlike AlInAsSb, which is lattice matched to GaSb, AlAsSb is lattice matched to InP and InGaAs, offering the prospect for very high sensitivity telecommunications APDs operating at very high bit rates [17].…”