Broadening of resonance lines by charged dislocations

Stoneham, A. M.

doi:10.1088/0022-3719/7/5/010

Cited by 3 publications

(1 citation statement)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Atomic resolution electron diffraction techniques and modeling may be able to provide the required atomic configurations and electron paramagnetic resonance spectroscopy could be used to probe the unpaired electrons in the dangling bonds at the plane termination. [72,73]…”

Section: Comparisons To Other Semiconductorsmentioning

confidence: 99%

Imaging Light‐Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping

Orr,

Diao,

Lintangpradipto

et al. 2023

Advanced Materials

View full text Add to dashboard Cite

In recent years, halide perovskite materials have been used to make high performance solar cell and light‐emitting devices. However, material defects still limit device performance and stability. Here, we use synchrotron‐based Bragg Coherent Diffraction Imaging to visualise nanoscale strain fields, such as those local to defects, in halide perovskite microcrystals. We find significant strain heterogeneity within MAPbBr3 (MA = CH3NH3+) crystals in spite of their high optoelectronic quality, and identify both 〈100〉 and 〈110〉 edge dislocations through analysis of their local strain fields. By imaging these defects and strain fields in situ under continuous illumination, we uncover dramatic light‐induced dislocation migration across hundreds of nanometers. Further, by selectively studying crystals that are damaged by the X‐ray beam, we correlate large dislocation densities and increased nanoscale strains with material degradation and substantially altered optoelectronic properties assessed using photoluminescence microscopy measurements. Our results demonstrate the dynamic nature of extended defects and strain in halide perovskites, which will have important consequences for device performance and operational stability.This article is protected by copyright. All rights reserved

show abstract

Section: Comparisons To Other Semiconductorsmentioning

confidence: 99%

Imaging Light‐Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping

Orr,

Diao,

Lintangpradipto

et al. 2023

Advanced Materials

View full text Add to dashboard Cite

show abstract

Line Broadening and Line Displacement of EPR Transitions Produced by Inhomogeneous Plane Stresses in a Two‐Layer System

Gehlhoff¹,

Segsa²

1981

Physica Status Solidi (b)

View full text Add to dashboard Cite

The strain induced changes of lineshapes and line positions of EPR transitions in a film-substrate system with elastic cubic symmetry are nnalysed. Thereby it is assumed, that the distributions of stresses and strains in the two-layer system are induced by inhomogeneous plane stresses developed in the film.Die durch Spannungen bewirkten VerSnderungen der Linienformen und Linienlagen von EPRUbergangen in einer Film-Substrat-Anordnung mit elastischer kubischer Symmetrie wird analysiert. Hierbei wird angenommen, daB die Verteilungen der Spannungen und Deformationen in dem Zwei-Schicht-System durch im Film erzeugte inhomogene ebene Spannungen hervorgerufen werden.

show abstract

Quenching of luminescence in semiconductors by charged defects

Tasker

Stoneham

1977

J. Phys. C: Solid State Phys.

Self Cite

View full text Add to dashboard Cite

Abstract. Charged point defects and dislocations create internal electric fields that can prevent the binding of carriers to luminescent centres such as N in Gap. This paper calculates the distribution of fields present in a semiconductor and its effect on the lifetime of an electron trapped at a localised impurity The results show a decrease in the fraction of effective luminescent centres with increasing concentration of ionised donors and acceptors Both unscreened dislocations and those with a compensting atmosphere of oppositely charged point defects are considered and the calculations show dark regions around them, as observed

show abstract

Broadening of resonance lines by charged dislocations

Cited by 3 publications

References 8 publications

Imaging Light‐Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping

Imaging Light‐Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping

Line Broadening and Line Displacement of EPR Transitions Produced by Inhomogeneous Plane Stresses in a Two‐Layer System

Quenching of luminescence in semiconductors by charged defects

Contact Info

Product

Resources

About