Broadband transverse magnetic pass polarizer with low insertion loss based on silicon nitride waveguide

Review of Recent Progress on Silicon Nitride-Based Photonic Integrated Circuits

“…Besides, hybrid photonic devices on Si3N4platforms have also been demonstrated for on-chip polarization handling and high-speed data communications. A highly efficient horizontally asymmetric TM-pass polarizer on amorphous-silicon (a-Si) and Si3N4 was proposed in [16]. The intended purpose of this device is to pass the TM-like mode and suppress the TE-like mode at the output.…”

“…Si3N4 is used for different applications, ranging from passive to active devices and nonlinear optics [6][7][8][9]. In this direction, different optical components of Si3N4 and Si3N4on SOI platforms have also been demonstrated recently, such as antennas, arrayed waveguide gratings, grating couplers, and polarization rotator and beam-splitters [10][11][12][13][14][15].The multilayered stack integration of Si3N4 with different materials for the different applications is still a challenging task [16][17][18][19][20][21]. Thus, different types of modulators [22][23][24][25][26][27][28][29], resonators [30][31][32][33][34][35], and photodetectors [36][37][38][39] based on Si3N4 have been introduced in the field from time to time.…”

High performance TM-pass polarizer via subwavelength grating bandgap engineering

“…For TM-pass polarizers several solutions have been proposed, but most of them require a complex fabrication process [5] or reflect the fundamental TE mode back into the system [6], which can have detrimental sideeffects. Other approaches include using a polarization splitting mechanism with an air cladding, which can be problematic for integration [7], employing a Bragg grating with only 50 nm wide slots to radiate the TE polarization [8], or leveraging a directional coupler comprised of silicon and silicon nitride waveguides to couple only the TM mode [9].…”