Broadband quasi-optical sub-THz detector based on GaAs HEMT

Kopyt, P.; Salski, Bartłomiej; Cuper, J.; Zagrajek, Przemysław; Bar, Jan; Obrebski, Dariusz

doi:10.23919/mikon.2018.8405164

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2019

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“…-which has been shortly described in Ref. 14. The approach uses a reference free-space detector of known responsivity calibrated by its manufacturer with the method reported in Ref.…”

Section: Technologymentioning

confidence: 99%

Measurements of the responsivity of FET‐based detectors of sub‐THz radiation

Kopyt¹,

Salski²,

Pacewicz³

et al. 2019

Opto-Electronics Review

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This article describes a novel approach to measure responsivity of a FET-based sub-THz detector using on-wafer probes to directly feed a bare antenna-less detecting device. Thus, the approach eliminates the need to know beforehand the detector's effective aperture, which can be a source of large variation between responsivity measurements of various FET-based detectors often cited in the literature. It seems that the presented method can be useful at making direct comparisons between responsivity of various devices (e.g., MOSFETs, HEMTs etc.). As a demonstration, the sub-THz responsivity of a pHEMT device fabricated using a commercial GaAs process has been measured in a WR-3 frequency band. Additionally, the results have been compared against data obtained using an alternative approach. The verification method consisted in integrating exactly the same device with a broad-band antenna and a carefully selected high-resistivity silicon lens and comparing its performance with that of a commercial calibrated detector based on Schottky diodes.

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“…-which has been shortly described in Ref. 14. The approach uses a reference free-space detector of known responsivity calibrated by its manufacturer with the method reported in Ref.…”

Section: Technologymentioning

confidence: 99%