Measurements of the responsivity of FET‐based detectors of sub‐THz radiation

Kopyt, P.; Salski, Bartłomiej; Pacewicz, Adam; Zagrajek, Przemysław; Marczewski, J.

doi:10.1016/j.opelre.2019.04.001

Cited by 5 publications

(3 citation statements)

References 13 publications

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“…An estimation of the responsivity given in V/W was obtained by comparison with calibrated detector of the same size, for the details of the method see Ref. [19]. The method, which was used instead of calculation power deposited on a detector aperture, allowed us to decrease large systematic error.…”

Section: B Sources Of Radiation and Methodsmentioning

confidence: 99%

Time Resolution and Dynamic Range of Field-Effect Transistor–Based Terahertz Detectors

Zagrajek

Danilov

Marczewski

et al. 2019

J Infrared Milli Terahz Waves

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We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and GaAs-based high electron mobility transistors detectors. Applying monochromatic radiation of high power, pulsed, line-tunable molecular THz laser, which operated at frequencies in the range from 0.6-3.3 THz, we demonstrated that all these detectors have at least nanosecond response time. We showed that detectors yield a linear response in a wide range of radiation power. At high powers the response saturates varying with radiation power P as U = R0P/(1 + P/Ps), where R0 is the low power responsivity, Ps is the saturation power. We demonstrated that the linear part response decreases with radiation frequency increase as R0 ∝ f −3 , whereas the power at which signal saturates increases as Ps ∝ f 3 . We discussed the observed dependences in the framework of the Dyakonov-Shur mechanism and detector-antenna impedance matching. Our study showed that FET transistors can be used as ultrafast room temperature detectors of THz radiation and that their dynamic range extends over many orders of magnitude of power of incoming THz radiation. Therefore, when embedded with current driven read out electronics they are very well adopted for operation with high power pulsed sources.PACS numbers:

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Section: B Sources Of Radiation and Methodsmentioning

confidence: 99%

Time Resolution and Dynamic Range of Field-Effect Transistor–Based Terahertz Detectors

Zagrajek

Danilov

Marczewski

et al. 2019

J Infrared Milli Terahz Waves

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“…These devices can be used for various analog or digital applications, which also depend on the semiconductor crystalline or amorphous state, within the device (Al-Amin et al, 2014;Liu et al, 2015). In addition, there is a high OFET demand for optical sensing, due to their capabilities for signal rectification which can be compared to Schottky diodes (Parker & Rathmell, 2003;Ruzgar et al, 2017;Kopyt et al, 2019). OFETs are also commonly referred to as a current amplifier (output signal increases) or attenuators (output signal decreases), and depending on their configuration and architecture, the resulting signal may vary (Lin et al, 2009;Tayal & Nandi, 2018;Kaisti, 2017).…”

Section: Introductionmentioning

confidence: 99%

Novel Frequency Dependent OFET Attenuator Using ClInPc with Al2O3 Embedded Nanoparticles in Nylon 11 for Flexible Electronics

Hamui,

Sánchez-Vergara,

Ferrer-Garcia

2023

JART

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The Organic field-effect transistors (OFETs) have been largely investigated due to their low-cost manufacturing, flexibility, and lightweight, as well as their optical and electrical characteristics. That allow its application in sensors, amplifiers, attenuators signal filtering, and high-frequency response devices, like biosensing, wearable electronics, optoelectronics, telecommunications, and other potential applications. Throughout this investigation, a ClInPc flexible OFET with Al2O3 embedded particles in nylon 11, was manufactured and characterized to evaluate the optoelectronic and morphological properties. For the manufacturing, a high-vacuum thermal evaporation deposition technique was used, and UV-vis spectroscopy analysis and scanning electron microscopy were conducted to evaluate the optoelectronic and morphological properties. Also, a study regarding the electrical characteristics for different time-dependent wavefunction input signals, changing the input voltage and frequency, has been conducted. The latter was driven to determine the time-response characteristics, gains, phase shift and to determine whether the device function as an attenuator or an amplifier with the selected configuration. The device has been modelled to obtain the OFET operation parameters. A resulting capacitance of 567 pF was calculated. Uniform and continuous films where obtained, which guarantees an efficient charge transport. For all signals the output voltage is lower than that of the input voltage. Also, for the higher frequency the output voltage is decreased compared to lower frequencies. Gains decreasing variation of up to 0.05 indicate the operating application as an attenuator. Phase variation of up to 100 °, resulted while varying the input frequency. The model resulted on a gate capacitance value between 500 and 1180 pF, and gate-drain capacitance value between 50 and 500 pF. All of this could give evidence that state of the art ClInPc flexible OFET device with Al2O3 embedded nanoparticles in nylon 11 could be used toward current high-performance frequency-dependent flexible applications.

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“…The various detectors such as photoconductive antennas [9], bolometers [10][11][12], Schottky barrier diodes [13], and field-effect transistors (FETs) [14][15][16] have been formulated in sub-THz and THz range. In the last few years, complementary metal-oxide-semiconductor (CMOS) technology compatible FETs as THz detectors have been successfully investigated to achieve higher responsivity, low noise equivalent power (NEP), and faster response [17][18][19]. The generation and detection process of THz waves by using oscillations of plasma waves in the channel of FETs has been first suggested in the theoretical work of Dyakonov and Shur [20].…”

Section: Introductionmentioning

confidence: 99%

Room temperature terahertz detector based on single silicon nanowire junctionless transistor with high detectivity

Jakhar¹,

Dhyani²,

Das³

2020

Semicond. Sci. Technol.

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In this work, the n-type single silicon nanowire (NW) based junctionless field-effect transistor (FET) is demonstrated as an efficient terahertz (THz) detector. For the effective coupling of the THz radiations with NW junctionless FET, the lobes of the rounded bow-tie antenna are connected to the gate and source terminals of the device. The antenna design is optimized with proper impedance matching conditions to achieve maximum power transfer between antenna and detector. The simulated antenna resonates at 0.43 THz frequency with 19 GHz bandwidth. Further simulations have been done on Lumerical finite difference time domain software to analyze the electric field distribution profile. To investigate the optical response of this optimized antenna design, an array of the simulated antenna has been fabricated and its transmission spectra are measured. Finally, the simulated antenna has been integrated with the n-type NW junctionless transistor. A maximum responsivity of 468 V W−1 at 0.425 THz frequency and noise-equivalent-power of ∼ 10−9W/Hz1/2 is obtained at room temperature. The complementary metal-oxide-semiconductor’s compatibility, ease of integration on chips, possibility to realize multiple pixel arrays, andscalability to higher frequencies, make this device promising for THz electronics.

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Measurements of the responsivity of FET‐based detectors of sub‐THz radiation

Cited by 5 publications

References 13 publications

Time Resolution and Dynamic Range of Field-Effect Transistor–Based Terahertz Detectors

Time Resolution and Dynamic Range of Field-Effect Transistor–Based Terahertz Detectors

Novel Frequency Dependent OFET Attenuator Using ClInPc with Al2O3 Embedded Nanoparticles in Nylon 11 for Flexible Electronics

Room temperature terahertz detector based on single silicon nanowire junctionless transistor with high detectivity

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