Broadband high quantum efficiency InGaAs/InP focal plane arrays via high precision plasma thinning

Mie-Type Surface Texture-Integrated Visible and Short-Wave Infrared InGaAs/InP Focal Plane Arrays

“…For the InP nanopillar with the proper size, resonance wavelength of the first-order Mie mode should be about 0.9–1 μm to supply a strong resonance in both visible-extended and SWIR parts. For the InP contact layer in vis–SWIR InGaAs, the transmittance over 50 and 80% at wavelengths of 0.7–0.9 and 0.9–1.60 μm will promise the fine performances of broadband response . As a result, the parameters of InP nanopillar arrays to fabricate are a radius of 130 nm and a height of 140 nm.…”

“…The QE noise peaks around 1400 nm can be explained by the water vapor absorption band. For a longer wavelength, the ∼3 μm photodiode is able to excite the cavity effect within the device …”

“…The spectral response of short-wave infrared (SWIR) In 0.53 Ga 0.47 As/InP focal plane arrays (FPAs) typically covers the wavelength range of 0.9–1.7 μm. − For the visible–SWIR (vis–SWIR) In 0.53 Ga 0.47 As (hereafter referred to as InGaAs), it is extended to 0.5–1.7 μm via a substrate removing process. Apart from applications in space remote sensing, the vis–SWIR InGaAs FPAs are emerging as a very powerful technology for novel applications such as medical diagnostics and polarization imaging. − However, the sensitivities of the commercial vis–SWIR InGaAs FPAs are currently inferior to that of the silicon cameras in the wavelength range of 0.5–0.9 μm. , Because of the lower surface recombination velocity among III–V semiconductors, InP has been demonstrated to be an ideal substrate to integrate with Mie resonator arrays. , Improved light absorption and photoelectric conversion in the photocathodes for solar hydrogen production have been observed . For the backside-illuminated InGaAs PIN FPAs with a spectral response of 1–1.7 μm, periodically arranged InP Mie resonators can restrain the deleterious multiple reflection of scattered light and enhance the light absorption in the InGaAs absorber, from which enhanced quantum efficiencies and image quality can be expected.…”

“…Second, the Mie resonators have to be tailored for broadband antireflection operation between 0.5 and 1.7 μm. Moreover, typically the thickness of vis–SWIR InGaAs FPA chips after removing the InP substrates is merely several micrometers, which renders the chip fragile and the introduction of the additional process difficult . By far, the Mie-type texture surface-integrated vis–SWIR InGaAs FPAs have not been reported previously.…”

“…16−20 However, the sensitivities of the commercial vis−SWIR InGaAs FPAs are currently inferior to that of the silicon cameras in the wavelength range of 0.5−0.9 μm. 21,22 Because of the lower surface recombination velocity among III−V semiconductors, InP has been demonstrated to be an ideal substrate to integrate with Mie resonator arrays. 6,23 Improved light absorption and photoelectric conversion in the photocathodes for solar hydrogen production have been observed.…”