Mie-Type Surface Texture-Integrated Visible and Short-Wave Infrared InGaAs/InP Focal Plane Arrays

Abstract

Semiconductor nanostructures with high refractive indexes are highly promising to serve as a broadband omnidirectional antireflection layer for optoelectronic device applications. InP nanopillar arrays are designed and fabricated on the backside surface of an InGaAs/InP focal plane array (FPA) via a colloidal lithography and etching process. With broadband scattering resonances, the low-aspect-ratio and quasi-periodic InP nanopillars act as Mie resonators and couple more light into the InGaAs layer by reducing absorption loss in the InP contact layer. Broadband low reflectivity down to 5%, 10−20% enhanced quantum efficiency, and 18.8% higher FPA response are realized over the wavelength range of 500−1700 nm. These results demonstrate that the InP Mie resonators can significantly improve the performance of largeformat InGaAs FPAs without image quality degradation.

Dispersion‐Controlled Gold–Aluminum–Silicon Dioxide–Aluminum Nanopawn Structures for Visible to NIR Light Modulation

“…Nanocolloidal lithography (NCL), [ 1–4 ] which uses nanoparticles of various sizes, shapes, and materials as an etching mask, enables simple and cost‐efficient fabrication of nanostructures in the fields of metamaterials, [ 5–7 ] solar cells, [ 8–10 ] displays, [ 11–13 ] sensors, [ 14–16 ] and on‐chip devices. [ 17–19 ] To improve the precision of colloidal lithography, such as the structural uniformity, [ 13,14,16,18 ] sidewall profile, [ 6,7,9,20 ] and step coverage, [ 8,11,12,21 ] high selectivity between the nanoparticles and targeted materials is critical and thus has been extensively studied.…”

“…[ 17–19 ] To improve the precision of colloidal lithography, such as the structural uniformity, [ 13,14,16,18 ] sidewall profile, [ 6,7,9,20 ] and step coverage, [ 8,11,12,21 ] high selectivity between the nanoparticles and targeted materials is critical and thus has been extensively studied. [ 5–22 ] However, for most nanoparticle etching masks (e.g., polystyrene, polyamide, and silica colloids), the etching selectivity is restricted to specific metals or dielectrics, requiring additional multiple or nonscalable fabrication steps hindering application of the advantages of the NCL process to multi‐material nanostructures.…”

“…Nanocolloidal lithography (NCL), [ 1–4 ] which uses nanoparticles of various sizes, shapes, and materials as an etching mask, enables simple and cost‐efficient fabrication of nanostructures in the fields of metamaterials, [ 5–7 ] solar cells, [ 8–10 ] displays, [ 11–13 ] sensors, [ 14–16 ] and on‐chip devices. [ 17–19 ] To improve the precision of colloidal lithography, such as the structural uniformity, [ 13,14,16,18 ] sidewall profile, [ 6,7,9,20 ] and step coverage, [ 8,11,12,21 ] high selectivity between the nanoparticles and targeted materials is critical and thus has been extensively studied. [ 5–22 ] However, for most nanoparticle etching masks (e.g., polystyrene, polyamide, and silica colloids), the etching selectivity is restricted to specific metals or dielectrics, requiring additional multiple or nonscalable fabrication steps hindering application of the advantages of the NCL process to multi‐material nanostructures.…”

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thus has been extensively studied. [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] However, for most nanoparticle etching masks (e.g., polystyrene, polyamide, and silica colloids), the etching selectivity is restricted to specific metals or dielectrics, requiring additional multiple or nonscalable fabrication steps hindering application of the advantages of the NCL process to multi-material nanostructures.As a candidate for realizing multimaterial nanostructures, hole-mask colloidal lithography (HCL) has also recently received attention. [23][24][25][26][27][28] HCL achieves multilayered nanophotonic structures with a robust hole-array metal mask (e.g., Au, Cr, and Ni), which is constructed via metal or dielectric evaporation on nanocolloids.

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“…The high sidewall verticality and aspect ratio of the nanopawn structures support optical modes highly sensitive to the excitation direction of incident waves through the mixing of the interface-gap-assisted localized surface plasmons (GLSPs) formed in between the Au-NP and Al-disk interface, and plasmonic Fabry-Pérot (FP) modes formed in between the Al-disk and Al substrate; complementary spectral responses between reflected and scattered light are also demonstrated. As an application example, information encryption based on the triple-channel (i.e., reflection, scattering, and transmission) angle-dependent complementary-color responses is presented.Nanocolloidal lithography (NCL), [1][2][3][4] which uses nanoparticles of various sizes, shapes, and materials as an etching mask, enables simple and cost-efficient fabrication of nanostructures in the fields of metamaterials, [5][6][7] solar cells, [8][9][10] displays, [11][12][13] sensors, [14][15][16] and on-chip devices. [17][18][19] To improve the precision of colloidal lithography, such as the structural uniformity, [13,14,16,18] sidewall profile, [6,7,9,20] and step coverage, [8,11,12,21] high selectivity between the nanoparticles and targeted materials is critical and…”