Broadband GaN Dual-Gate HEMT Low Noise Amplifier

Shih, Sean; Deal, W.R.; Sutton, W.; Chen, Y.C.; Smorchkova, I.; Heying, B.; Wójtowicz, M.; Siddiqui, M.

doi:10.1109/csics07.2007.26

Cited by 23 publications

(4 citation statements)

References 8 publications

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“…It achieves 10 dB gain and NF of 3.4 -5.7 dB at 2.4 GHz over the temperature range. [9] shows the promising capability of GaN LNAs with a 0.2 μm AlGaN/GaN HEMT operating between 300 MHz and 4 GHz. The paper reports a gain of 18 dB and NF around 1.5 dB from 2 GHz -4 GHz (increasing to 4 dB at 300 MHz) with an output compression power level of 21 dBm.…”

Section: B Existing High Temperature and Gan Lnasmentioning

confidence: 99%

A high temperature wideband low noise amplifier for downhole applications

Cunningham

Koh

2016

2016 IEEE International Symposium on Circuits and Systems (ISCAS)

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As the oil industry continues to drill deeper to reach new wells, electronics are required to operate at extreme pressures and temperatures. Coupled with substantial real-time data targets, the need for robust high speed electronics is quickly on the rise. This paper presents a high temperature wideband low noise amplifier (LNA) with zero temperature coefficient maximum available gain (ZTC MAG ) biasing for a downhole communication system. The proposed LNA is designed and prototyped using 0.25 μm GaN on SiC RF transistor technology, which is chosen due to the high junction temperature capability. Measurements show that the proposed LNA can operate reliably up to an ambient temperature of 230°C with a minimum noise figure (NF) of 2.0 dB, average gain of 16.1 dB, and input P1dB of 4.0 dBm from 230.5 -285.5 MHz. The maximum variation with temperature from 25°C to 230°C is 1.53 dB for NF and 0.65 dB for gain.

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Section: B Existing High Temperature and Gan Lnasmentioning

confidence: 99%

A high temperature wideband low noise amplifier for downhole applications

Cunningham

Koh

2016

2016 IEEE International Symposium on Circuits and Systems (ISCAS)

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“…Many methods for matching the input by means of passive circuit elements are possible with varying bandwidths and degrees of complexity. One of the most elegant way is to use source degenerated method [16,17,47]. This method requires two inductors, one at source and the other at the gate, to provide the power and noise match for the LNA.…”

Section: Lna Designmentioning

confidence: 99%

“…Those features can be beneficial for broadband power applications as well as for very linear low noise front-end circuits with high reliability under CW power overdrive. The high survivability of GaNbased HEMT has increased interest for robust GaN-based HEMT LNA designs [15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Compact modelling of InAlN/GaN HEMT for low noise applications

Sakalas

Šimukovič

Piotrowicz

et al. 2014

Semicond. Sci. Technol.

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This paper presents results of high-frequency noise modelling of InAlN/GaN high electron mobility transistors (HEMTs) with different formulations of the minimum noise figure NF min . Current-voltage characteristics and s-parameters of 0.15 μm gate length and 2 × 75 μm gate width InAlN/GaN HEMTs were measured at room temperature in a wide frequency range (300 MHz to 50 GHz) and bias range (V GS from −4.8 to 1 V and V DS from 0 to 21 V). Both the EEHEMT1 and Angelov GaN compact models yielded excellent agreement for transfer and output characteristics, transconductance g m , and f T , f max. High-frequency noise parameters NF min , R n , Γ OPT of InAlN/GaN HEMT were measured in 8-50 GHz frequency band. Noise formulation within the EEHEMT1 model underestimates the measured NF min and R n . The well known three-parameter PRC noise model is in a better agreement with the measured data but neglects the shot noise resulting from the gate leakage. The inductive degenerated source matching method and EEHEMT1 were used to design a single stage LNA operated at 8 GHz frequency. A 10 dB gain with an input reflection of −12 dB with a 2.5 dB of noise factor were obtained at 8 GHz.

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“…Aust et al [8] demonstrated a GaN dual-gate HEMT LNA with better than 2.5 dB noise figure and 12.5 to 18 dB gain within the 1 to 12 GHz frequency range and which can withstand an input power level approaching 38 dBm. Shih et al [9] reported a GaN dualgate HEMT coplanar waveguide LNA with an average of 1.5 dB noise figure between 2 to 5 GHz and 18 dB gain within 0.3 to 4 GHz frequency range.…”

Section: Introductionmentioning

confidence: 99%

Design and analysis of ultra wideband GaN dual-gate HEMT low noise amplifiers

Shih

Deal

Yamauchi

et al. 2009

2009 IEEE MTT-S International Microwave Symposium Digest

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This paper presents two ultra wide bandwidth low noise amplifiers utilizing 0.18-um AlGaN/GaN HEMT technology. The single-stage, resistive feedback microstrip amplifiers target two different frequency bands, 0.3 -4 GHz and 1.2 -18 GHz, capable of better than 13:1 bandwidth. Both amplifiers use dual-gate HEMT devices with an on-chip drain bias network. The low frequency amplifier achieves 17.7 dB flat gain between 300 MHz -3 GHz, and 1.2 dB minimum noise figure around 1.3 GHz. The high frequency LNA shows an average of 13 dB gain and between 2 to 3 dB noise figure across the band. The robust LNAs can be operated under various bias voltages while similar gain and noise figure performance are maintained.Index Terms -broadband amplifier, dual-gate HEMT, GaN HEMT, low noise amplifier, LNA.

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Broadband GaN Dual-Gate HEMT Low Noise Amplifier

Cited by 23 publications

References 8 publications

A high temperature wideband low noise amplifier for downhole applications

A high temperature wideband low noise amplifier for downhole applications

Compact modelling of InAlN/GaN HEMT for low noise applications

Design and analysis of ultra wideband GaN dual-gate HEMT low noise amplifiers

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