Broadband Detection Based on 2D Bi2Se3/ZnO Nanowire Heterojunction

Zeng, Zhi; Wang, Dongbo; Wang, Jinzhong; Jiao, Shujie; Liu, Donghao; Zhang, Bingke; Zhao, Chenchen; Liu, Yangyang; Liu, Yaxin; Xu, Zhikun; Fang, Xuan; Zhao, Liancheng

doi:10.3390/cryst11020169

Cited by 10 publications

(6 citation statements)

References 58 publications

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“…The metal–semiconductor–metal (MSM) deep-UVPDs were fabricated using the standard semiconductor fabrication techniques, which is a photolithography process employed to pattern the symmetric metal electrode pairs [ 34 , 35 , 36 ]. The diagrammatic structure of the PEC UVPD is shown in Figure 1 a.…”

Section: Methodsmentioning

confidence: 99%

Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film

Wang

Jiao

et al. 2022

Micromachines

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High Mg content (60%) ZnMgO samples with and without Ga dope were grown by an RF magnetron sputtering system. The effect of Ga dope on the ZnMgO sample and the respective ultraviolet photodetectors (UVPD) device’s performance were carefully studied by various experimental methods. The investigations of the structure and optical properties of the ZnMgO sample established that the Ga doped sample has a better crystal quality and larger band gap (5.54 eV). The current-voltage characteristics indicate that both the photocurrent and dark current were enhanced after Ga dope. Under 12 V bias, the undoped UVPD show two spectral response peaks at 244 nm and 271 nm with a responsivity of 1.9 A/W and 0.38 A/W, respectively. While the Ga doped UVPD showed only one response peak at 241 nm and the deep UV responsibility up to 8.9 A/W;, as the bias increased from 12 V to 60 V, the responsiveness raised to 52 A/W, with a signal to noise ratio (241 nm/700 nm) as high as 105. Combining the results of XRD, PL spectrum and XPS, the enhanced ultraviolet photoresponse of the Ga dope device contributed to improving the crystal quality and “dopant-defect pairing effect” caused by Ga doping, which led to a considerable reduction in the number of ionized impurities in the scatting centers, and enhanced the carrier’s mobility. Our work demonstrates that even a high Mg content ZnMgO can exhibit enhanced UV performance after a Ga dope due to the dopant-defect pairing effect, which confirmed the advantage of the use of ZnMgO in the deep-UV region.

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Section: Methodsmentioning

confidence: 99%

Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film

Wang

Jiao

et al. 2022

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“…In addition, they produced different composite materials and application fields by adjusting the sizes of and the growth methods for both the GQDs and the ZnO nanowires (nanorods). At present, the composites based on ZnO nanowires still have good development and broad application prospects [36]. Dhar et al [37] deposited GQDs with a size of approximately 6 nm on the surfaces of ZnO nanorods with a diameter of 100 nm for ultraviolet (UV) light detection in 2016.…”

Section: Zno-0d Graphene Quantum Dot Compositementioning

confidence: 99%

Brief Review of Photocatalysis and Photoresponse Properties of ZnO–Graphene Nanocomposites

et al. 2021

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As a typical wide bandgap semiconductor, ZnO has received a great deal of attention from researchers because of its strong physicochemical characteristics. During the past few years, great progress has been made in the optoelectronic applications of ZnO, particularly in the photocatalysis and photodetection fields. To enable further improvements in the material’s optoelectronic performance, construction of a variety of ZnO-based composite structures will be essential. In this paper, we review recent progress in the growth of different ZnO–graphene nanocomposite structures. The related band structures and photocatalysis and photoresponse properties of these nanocomposites are discussed. Additionally, specific examples of the materials are included to provide an insight into the common general physical properties and carrier transport characteristics involved in these unique nanocomposite structures. Finally, further directions for the development of ZnO–graphene nanocomposite materials are forecasted.

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“…Various strategies have been implemented to fabricate photodetectors exhibiting high-efficiency, broadband photodetection performance. Zeng et al built a photodetector based on a two-dimensional Bi 2 Se 3 /ZnO NWA heterojunction possessing a high photoresponsivity (0.15 A W –1 ) at 377 nm . Long et al reported an interesting SnO 2 –NiO PN junction-based photodetector with a cross-bar structure, showing a remarkable responsivity and detectivity of 30.29 mA W –1 and 2.24 × 10 11 Jones at 0 V bias, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…Zeng et al built a photodetector based on a two-dimensional Bi 2 Se 3 /ZnO NWA heterojunction possessing a high photoresponsivity (0.15 A W −1 ) at 377 nm. 30 Long et al reported an interesting SnO 2 − NiO PN junction-based photodetector with a cross-bar structure, 31 showing a remarkable responsivity and detectivity of 30.29 mA W −1 and 2.24 × 10 11 Jones at 0 V bias, respectively. However, the properties of these materials are still insufficient for the photoresponsivity or detectivity of these materials was not satisfactory for broadband photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Self-Powered Broadband Photodetectors Material Based on Co₃O₄–ZnO Heterojunction with Bottlebrush Nanostructure

Wang

et al. 2023

ACS Appl. Electron. Mater.

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Self-powered broadband photodetectors operating in the ultraviolet−visible window are essential for optical communication, military monitoring, multispectral detection, and environmental monitoring. In this study, a new bottlebrush nanostructure based on the Co 3 O 4 −ZnO PN junction is fabricated as an efficient broadband photodetector capable of operation under zero bias conditions. This photodetector has a reasonable band structure, exhibits improved efficiency of light absorption, and features reduced electron−hole recombination. Moreover, the device exhibits highly efficient detection performance in the UV− visible region. The responsivity (R), specific detectivity (D), and response speed of the device were 22.7 mA W −1 , 3.14 × 10 12 Jones, and 20/90 ms, respectively. These results suggest a new strategy for fabricating broadband photodetectors based on stable, nontoxic, low-cost metal oxides.

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Broadband Detection Based on 2D Bi2Se3/ZnO Nanowire Heterojunction

Cited by 10 publications

References 58 publications

Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film

Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film

Brief Review of Photocatalysis and Photoresponse Properties of ZnO–Graphene Nanocomposites

Self-Powered Broadband Photodetectors Material Based on Co₃O₄–ZnO Heterojunction with Bottlebrush Nanostructure

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Broadband Detection Based on 2D Bi2Se3/ZnO Nanowire Heterojunction

Cited by 10 publications

References 58 publications

Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film

Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film

Brief Review of Photocatalysis and Photoresponse Properties of ZnO–Graphene Nanocomposites

Self-Powered Broadband Photodetectors Material Based on Co3O4–ZnO Heterojunction with Bottlebrush Nanostructure

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Product

Resources

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Self-Powered Broadband Photodetectors Material Based on Co₃O₄–ZnO Heterojunction with Bottlebrush Nanostructure