Broadband and time-resolved absorption spectroscopy with light emitting diodes: Application to etching plasma monitoring

Cunge, G.; Vempaire, D.; Touzeau, M.; Sadeghi, N.

doi:10.1063/1.2822448

Cited by 29 publications

(29 citation statements)

References 19 publications

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“…Due to the very small plasma volume, CRDS is difficult to realize if spatial resolution is required [11,24]. Both TDLAS and BBAS have been successfully applied to microplasmas [4][5][6][8][9][10]. Absorbances are usually small, rarely exceeding 10 −3 , requiring in both cases a very stable setup.…”

Section: Absorption Spectroscopymentioning

confidence: 99%

Application of a mode-locked fiber laser for highly time resolved broadband absorption spectroscopy and laser-assisted breakdown on micro-plasmas

Niermann¹,

Budunoğlu²,

Gürel³

et al. 2012

J. Phys. D: Appl. Phys.

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Absorption spectroscopy is known to be a powerful tool to gain spatially and temporally resolved information on excited and reactive species in a plasma discharge. Furthermore, the interaction of the discharge with short intense laser pulses can trigger the ignition and the transition into other transient states of the plasma. In this context laser-assisted 'pump-probe' experiments involving simultaneously generated supercontinuum radiation yield highly temporally resolved and spatially well-defined information on the transient phenomena. In this paper we demonstrate the possibility for 'pump-probe' experiments by initiating breakdown on a picosecond time scale ('pump') with a high-power beam and measuring the broadband absorption with the simultaneously provided supercontinuum ('probe'). Since both pulses are generated from the same mode-locked master oscillator, they have a strong level of synchronization.

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Section: Absorption Spectroscopymentioning

confidence: 99%

Application of a mode-locked fiber laser for highly time resolved broadband absorption spectroscopy and laser-assisted breakdown on micro-plasmas

Niermann¹,

Budunoğlu²,

Gürel³

et al. 2012

J. Phys. D: Appl. Phys.

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“…However, we have also investigated the possibility of using the BCP template to pattern a dual hard mask [silicon anti-reflective coating/amorphous carbon (Si-ARC/a-C)] that is typically used to etch materials in the microelectronic industry 3 instead of the single SiO 2 hard mask. [20][21][22][23][24][25] Both reactors are connected under vacuum to a quasi-in situ XPS analyzer, which can be used for sample chemical composition measurement. The Si-ARC layer acts as an antireflective coating during photolithography and is also used to transfer the resist patterns into the organic mask.…”

Section: Methodsmentioning

confidence: 99%

Development of plasma etching processes to pattern sub-15 nm features with PS-b-PMMA block copolymer masks: Application to advanced CMOS technology

Delalande

Cunge

Chevolleau

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Pattern transfer using poly(styrene-block-methyl methacrylate) copolymer films and reactive ion etchingThe best strategies to transfer nanoholes formed from the self-assembly of Polystyren/ Polymethylmethacrylate (PS/PMMA) based block copolymers into a silicon substrate are investigated. The authors show that specific issues are associated with the plasma etching of materials through the PS masks obtained from self-assembly. Indeed, due to the nanometric size of sub-15 nm contact holes and to their inherently high aspect ratio (>5), plasma etching processes typically used to etch SiO 2 and silicon in the microelectronic industry must be revisited. In particular, processes where the etching anisotropy relies on the formation of passivation layer on the feature's sidewalls are not adapted to nanometric dimensions because these layers tend to fill the holes leading to etch stop issues. At the same time, the ion bombarding energy must be increased as compared to a typical process to overcome differential charging effects in high aspect-ratio nanoholes. However, by developing appropriate processes-such as synchronized pulsed plasmas-the authors show that it is possible to etch 70 nm deep holes into silicon by using block copolymers and a hard mask strategy. Another interesting observation resulting from these experiments is that for sub-15 nm holes, a critical dimension (CD)-dispersion of few nm leads to strong aspect ratio dependent etch rates. In addition, a careful analysis of the dispersion of the holes' CD after each plasma steps shows that the CD control is far from satisfying advanced CMOS technology requirements. A critical issue comes from the uncompleted PMMA removal from the PS/PMMA matrix during our self-assembly process: variable amount of PMMA remains in the PS holes, leading to microloading effects during the etching steps, which in turn generates CD-control loss. This problem perhaps can be solved by combining UV exposure to acetic acid treatment to provide PS masks free of PMMA residues before plasma etching.

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“…The optical emission spectra from the excited species were monitored by employing an optical fiber spectrometer (Ocean Optics, HR4000CG-UV-NIR). For the purpose of estimating the sputtered neutral particle flux to the substrate, sputtered Al and Zn atom densities were investigated by the absorption spectroscopy using two different absorption systems: one consisting of a hollow cathode lamp (HCL) [45][46][47][48][49], monochromator and photomultiplier tube (HCL-M-PMT) and the other of a light emitting diode (LED) [50,51], spectrometer, and a multichannel CCD detector (LED-S-CCD).…”

Section: Measurement Of Al and Zn Atom Density Using A Hollow Cathodementioning

confidence: 99%

Deposition of Aluminum-Doped ZnO Films by ICP-Assisted Sputtering

Matsuda

Hirashima

Mine

et al. 2013

ZnO Nanocrystals and Allied Materials

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Inductively coupled plasma (ICP) assisted DC sputter-deposition was used for the deposition of Al-doped ZnO (AZO or ZnO:Al) thin films. With increasing ICP RF power, film properties including deposition rate, crystallinity, transparency and resistivity were improved. To understand the plasma-surface interaction, several plasma diagnostics were performed. Heat fluxes to the substrate were measured by thermal probes, number densities of sputtered metallic atom species were measured by absorption spectroscopy using hollow cathode lamps (HCL) and light emitting diodes (LEDs), and neutral gas temperatures were measured by external cavity diode laser (ECDL) absorption spectroscopy. As a result, it was revealed that the high density ICP heated the substrate through a high heat flux to the substrate, resulting in a high quality film deposition without the need for intentional substrate heating.The heat flux to the substrate was predominantly contributed by the plasma charged species, not by the neutral Ar atoms which were also significantly heated in the ICP. The substrate position where the highest quality films were obtained was found to coincide with the position where the substrate heat flux took the maximum value.

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Broadband and time-resolved absorption spectroscopy with light emitting diodes: Application to etching plasma monitoring

Cited by 29 publications

References 19 publications

Application of a mode-locked fiber laser for highly time resolved broadband absorption spectroscopy and laser-assisted breakdown on micro-plasmas

Application of a mode-locked fiber laser for highly time resolved broadband absorption spectroscopy and laser-assisted breakdown on micro-plasmas

Development of plasma etching processes to pattern sub-15 nm features with PS-b-PMMA block copolymer masks: Application to advanced CMOS technology

Deposition of Aluminum-Doped ZnO Films by ICP-Assisted Sputtering

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