2014
DOI: 10.1117/12.2069937
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Broadband absorption enhancement in an uncooled microbolometer infrared detector

Abstract: This paper introduces a method for a broadband absorption enhancement in the LWIR range (8-12 μm), in single layer microbolometer pixels with 35 μm pitch. For the first time in the literature, this study introduces a very simple and low cost approach to enhance the absorption by embedding plasmonic structures at the same level as the already existing metallic layer of a microbolometer pixel. The metal layer comprises the electrode and the arm structures on the body. Even though the periodicity of the plasmonic… Show more

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Cited by 3 publications
(2 citation statements)
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“…Embedded in the Si3N4 absorber of the suspended microbolometer, a concentric double C-shaped plasmonic structure can enhance average absorptivity from 67.6% to 80.1% in the infrared band of 8 μm to 12 μm [15]. The Basak Kebapci proposed to enhance the broadband absorptivity by embedding Au plasmonic structure in the Si3N4 absorber of the microbolometer, which is easy to operate and highly costeffective, with the average absorptivity improved from 78% to 82% [16]. Although plenty of efforts have been made, there are few studies that can be conducted in the standard CMOS process due to the limitation of materials and the preparation process.…”
Section: Introductionmentioning
confidence: 99%
“…Embedded in the Si3N4 absorber of the suspended microbolometer, a concentric double C-shaped plasmonic structure can enhance average absorptivity from 67.6% to 80.1% in the infrared band of 8 μm to 12 μm [15]. The Basak Kebapci proposed to enhance the broadband absorptivity by embedding Au plasmonic structure in the Si3N4 absorber of the microbolometer, which is easy to operate and highly costeffective, with the average absorptivity improved from 78% to 82% [16]. Although plenty of efforts have been made, there are few studies that can be conducted in the standard CMOS process due to the limitation of materials and the preparation process.…”
Section: Introductionmentioning
confidence: 99%
“…Also, recently, researchers in our group demonstrated atomic layer deposition (ALD) grown ZnO as a candidate thermistor material with a TCR value of À10.4%/K [15]. While the most widely used absorber layer is Si 3 N 4 [16][17][18][19] there are also reports on the use of alternative CMOS compatible dielectrics [20] and thin metals [5,9] as the absorber layer.…”
Section: Introductionmentioning
confidence: 99%