2020
DOI: 10.1038/s41377-020-0254-7
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Broadband 200-nm second-harmonic generation in silicon in the telecom band

Abstract: Silicon is well known for its strong third-order optical nonlinearity, exhibiting efficient supercontinuum and four-wave mixing processes. A strong second-order effect that is naturally inhibited in silicon can also be observed, for example, by electrically breaking the inversion symmetry and quasi-phase matching the pump and the signal. To generate an efficient broadband second-harmonic signal, however, the most promising technique requires matching the group velocities of the pump and the signal. In this wor… Show more

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Cited by 34 publications
(21 citation statements)
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“…As a result a large SHG efficiency dependent on the applied reverse bias was observed (Figure 13H). Similar results have been reported by [199,200] with a 200 nm wide spectral SHG band demonstrated in [201] by group velocity engineering.…”
Section: Second-order Nonlinearitiessupporting
confidence: 90%
“…As a result a large SHG efficiency dependent on the applied reverse bias was observed (Figure 13H). Similar results have been reported by [199,200] with a 200 nm wide spectral SHG band demonstrated in [201] by group velocity engineering.…”
Section: Second-order Nonlinearitiessupporting
confidence: 90%
“…The low power threshold to get broadband SC in DM structures and the high coherence of the resulting frequency comb is promising for robust chip-scale frequency-comb sources. With the recent demonstration of silicon-based second-harmonic generation [77] and integrated thulium mode-locked laser sources [78], our results could be of benefit, for instance, to the development of fully integrated optical-frequency synthesizers. The generation of a strong dispersive wave far from the pump, which is needed for the comb stabilization of the carrier offset frequency by f -2f interferometry, could indeed be combined with a flat and smooth coherent spectrum between this latter wavelength and the pump one, as seen in Fig.…”
Section: -7mentioning
confidence: 88%
“…In particular, many novel integrated platforms for integrated SHG have recently emerged [2][3][4]. Conversions as high as 47,000%/(W ‱ cm 2 ) have been demonstrated in III-V semiconductors [5], and ultra-wide tuning was recently shown in silicon waveguides [6]. The large intrinsic nonlinearity in addition to the high-index contrast of sub-wavelength structures leads to very large effective nonlinearities.…”
Section: Lettermentioning
confidence: 99%